是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | R-PDSO-C2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.19 | Is Samacsys: | N |
其他特性: | EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED | 最大击穿电压: | 18.9 V |
最小击穿电压: | 17.1 V | 击穿电压标称值: | 18 V |
最大钳位电压: | 25.5 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-214AA | JESD-30 代码: | R-PDSO-C2 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 600 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性: | UNIDIRECTIONAL | 最大重复峰值反向电压: | 15.3 V |
子类别: | Transient Suppressors | 表面贴装: | YES |
技术: | AVALANCHE | 端子形式: | C BEND |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMBJP6KE18ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
SMBJP6KE18CA | MCC |
获取价格 |
Transient Voltage Suppressor 6.8 to 550 Volts 600 Watt | |
SMBJP6KE18CA | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Bidirectional, 1 Element, Silicon, DO- | |
SMBJP6KE18CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Bidirectional, 1 Element, Silicon, DO- | |
SMBJP6KE18CAE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Bidirectional, 1 Element, Silicon, DO- | |
SMBJP6KE18CAHE3 | MCC |
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Tape&Reel: 3Kpcs/Reel; | |
SMBJP6KE18CAP | MCC |
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DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, SMBJ, 2 PIN, Transient Suppresso | |
SMBJP6KE18CAQ | MCC |
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Tape :3K/Reel, 48K/Ctn; | |
SMBJP6KE18CA-TP | MCC |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Bidirectional, 1 Element, Silicon, DO- | |
SMBJP6KE18CA-TP-HF | MCC |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Bidirectional, 1 Element, Silicon, DO- |