Datasheet > SMBJP6KE170

SMBJP6KE170

更新时间： 2024-11-03 00:35:43

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其他 - ETC		/
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描述
Transient Voltage Suppressor

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中文翻译

获取价格

数据手册

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SMBJP6KE170 数据手册

SMBJP6KE6.8 thru SMBJP6KE440CA

Transient Voltage Suppressor

Breakdown Voltage 6.8 to 440 Volts

Peak Pulse Power

600 Watts

Features



Breakdown Voltages (V_BR) from 6.8 to 440V

600W peak pulse power capability with a 10/1000μs

waveform, repetitive rate (duty cycle):0.01%

Fast Response Time

CASE: SMB (DO214AA)



Low incremental surge resistance

Excellent clamping capability

Available in uni-directional and bi-directional

High temperature soldering guaranteed: 265℃ /10

seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)

tension

Application



Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on IC_S, MOSFE, signal lines of sensor units for

consumer, computer, industrial, automotive and

telecommunication

Mechanical Data



Case: Void-free transfer molded thermosetting epoxy

body meeting UL94V-O



Terminals: Tin-Lead or ROHS Compliant annealed

matte-Tin plating readily solderable per MIL-STD-750,

Method 2026



Marking: Body marked with part number

Polarity: Cathode indicated by band. No marking on bi-

directional devices

Dimensions in inches and (millimeters)



Weight: 0.093g（Approximately）

Maximum Ratings and Electrical Characteristics @ 25^OC unless otherwise specified

Conditions

Symbol

Value

600

Unit

P_PPM

Peak pulse power capability with a 10/1000μs

Peak pulse current with a 10/1000μs

I_PPM

SEE TABLE1

5.0

Steady state power dissipation at T_L=25℃ ,Lead lengths 0.375”(10mm)

P_M(AV)

Steady state power dissipation at T_A=25℃ when mounted on FR4 PC

described for thermal resistance

1.38

I_FSM

V_F

Peak forward surge current,8.3ms single half sine-wave unidirectional only⑴

Maximum instantaneous forward voltage at 30A for unidirectional only

Thermal resistance junction to lead

100

3.5/5.0

R_θJL

℃/W

℃

R_θJA

Thermal resistance junction to ambient

T_J,T_STG

Operating and Storage Temperature

-65 to +150

Notes:

⑴ Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum

⑵ V_F=3.5Vfor P4KE220(A) and below; V_F=5.0V for P4KE250(A) and above

Document Number: SMBP6KE6.8 thru SMBJP6KE440CA

Feb.29, 2012

www.smsemi.com

12 3 4

中文翻译

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与SMBJP6KE170相关器件

型号	品牌	获取价格	描述	数据表
SMBJP6KE170A	MCC	获取价格	Transient Voltage Suppressor 6.8 to 550 Volts 600 Watt
SMBJP6KE170A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJP6KE170AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJP6KE170AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJP6KE170AHE3	MCC	获取价格	Tape&Reel: 3Kpcs/Reel;
SMBJP6KE170AHE3-TP	MCC	获取价格	Trans Voltage Suppressor Diode, 600W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJP6KE170AP	MCC	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, SMBJ, 2 PIN, Transient Suppress
SMBJP6KE170AQ	MCC	获取价格	Tape :3K/Reel, 48K/Ctn;
SMBJP6KE170A-TP	MCC	获取价格	Trans Voltage Suppressor Diode, 600W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJP6KE170ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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