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SMBJ9.0A PDF预览

SMBJ9.0A

更新时间: 2024-11-04 09:20:27
品牌 Logo 应用领域
伯恩斯 - BOURNS 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
5页 355K
描述
SMBJ Transient Voltage Suppressor Diode Series

SMBJ9.0A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:14 weeks
风险等级:0.75其他特性:PRSM-MIN
最大击穿电压:11.1 V最小击穿电压:10 V
击穿电压标称值:10.75 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
参考标准:IEC-61000-4-2, 4-4, 4-5最大重复峰值反向电压:9 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SMBJ9.0A 数据手册

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Features  
Applications  
RoHS compliant*  
IEC 61000-4-2 ESD (Min. Level 4)  
IEC 61000-4-4 EFT  
Surface Mount SMB package  
Standoff Voltage: 5.0 to 170 volts  
Power Dissipation: 600 watts  
IEC 61000-4-5 Surge  
SMBJ Transient Voltage Suppressor Diode Series  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components.  
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AA (SMB)  
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 170 V and Breakdown  
Voltage up to 200 V. Typical fast response times are less than 1.0 ns for unidirectional devices and less than 5.0 ns for bidirectional devices  
from 0 V to Minimum Breakdown Voltage.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Value  
Unit  
(Note 1,2)  
Minimum Peak Pulse Power Dissipation (T = 1 ms)  
P
P
600  
Watts  
PK  
Peak Forward Surge Current  
8.3 ms Single Half Sine Wave Superimposed on Rated Load  
(JEDEC Method)  
I
100  
Amps  
FSM  
(Note 3)  
Steady State Power Dissipation @ TL = 75 °C  
P
5.0  
Watts  
Volts  
M(AV)  
Maximum Instantaneous Forward Voltage @ I = 50 A  
PP  
(Note 5)  
V
F
J
(For Unidirectional Units Only)  
Operating Temperature Range  
Storage Temperature Range  
T
-55 to +150  
-55 to +175  
°C  
°C  
T
STG  
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above T = 25 °C per Pulse Derating Curve.  
A
2. Thermal Resistance Junction to Lead.  
3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).  
4. Single Phase, Half Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.  
5.  
V
= 3.5 V on SMBJ5.0A through SMBJ90A and V = 5.0 V on SMBJ100A through SMBJ170A.  
F
F
How to Order  
SMBJ 5.0 CA  
Package  
SMBJ = SMA/DO-214AA  
Working Peak Reverse Voltage  
5.0 = 5.0 V  
(Volts)  
RWM  
Suffix  
A = 5 % Tolerance Unidirectional Device  
CA = 5 % Tolerance Bidirectional Device  
Asia-Pacific:  
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116  
Europe:  
Tel: +41-41 768 5555 • Fax: +41-41 768 5510  
The Americas:  
Tel: +1-951 781-5500 • Fax: +1-951 781-5700  
www.bourns.com  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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