Datasheet > SMBJ9.0A-HR

SMBJ9.0A-HR

更新时间： 2024-11-05 13:45:19

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网脉冲光电二极管瞬态抑制二极管
页数	文件大小	规格书
6页	874K
描述
SMBJ HR系列高可靠性瞬态抑制二极管是经升级筛选的Littelfuse即用型高可靠性瞬态抑制二极管。它采用紧凑的DO-214AA SMB封装，额定脉冲峰值功率耗损为600W。这些元件经过特

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中文翻译

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技术参数
数据手册
替代型号

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SMBJ9.0A-HR 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	R-PDSO-J2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.37	其他特性：	EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压：	11.1 V	最小击穿电压：	10 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-214AA
JESD-30 代码：	R-PDSO-J2	JESD-609代码：	e3
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	600 W
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-65 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性：	UNIDIRECTIONAL
最大功率耗散：	5 W	参考标准：	IEC-61000-4-2; IEC-61000-4-4
最大重复峰值反向电压：	9 V	表面贴装：	YES
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	J BEND	端子位置：	DUAL

SMBJ9.0A-HR 数据手册

TVS Diode

Surface Mount – 600W > SMBJ-HR series

Pb e3

RoHS

SMBJ-HR Series

Description

The SMBJ-HR High Reliability series is designed

speciﬁcally to protect sensitive electronic equipment from

voltage transients induced by lightning and other transient

voltage events.

Uni-directional

Bi-directional

Features

• 600W peak pulse power

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Excellent clamping

capability

• Low incremental surge

resistance

• Typical I_Rless than 1µA

above 12V

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

• Glass passivated chip

junction

• High temperature

soldering guaranteed:

260°C/40 seconds at

terminals

• Plastic package is

ﬂammability rated V-0 per

UL 94

• Meet MSL level1, per

J-STD-020, LF maximun

peak of 260°C.

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is

Pb-free and the terminal

ﬁnish material is tin(Sn)

(IPC/JEDEC J-STD-

609A.01)

Agency Approvals

Agency

Agency File Number

E230531

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

• For surface mounted

applications to optimize

board space

Parameter

Symbol

Value

Unit

• Low proﬁle package

Peak Pulse Power Dissipation at

TA=25ºC by 10/1000µs Waveform (Fig.2)(Note

1), (Note 2)

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC 61000-4-2 ESD

P_PPM

600

Power Dissipation on Inﬁnite Heat Sink at

T_A=50^OC

P_M(AV)

I_FSM

V_F

5.0

100

3.5V

Peak Forward Surge Current, 8.3ms Single Half

Sine Wave (Note 3)

Maximum Instantaneous Forward Voltage at

50A for Unidirectional Only

Operating Junction and StorageTemperature

Range

T_J, T_STG-65 to 150 °C

15kV(Air), 8kV (Contact)

• ESD protection of data

lines in accordance with

IEC 61000-4-2

TypicalThermal Resistance Junction to Lead

R_ƟJL

°C/W

TypicalThermal Resistance Junction to Ambient R_ƟJA

100

Notes:

• UL Recognized to ANSI/

UL 497B: Protectors for

Data Communications and

Fire-Alarm Circuits.

1. Non-repetitive current pulse per Fig. 4 and derated above T_A= 25^OC per Fig. 3.

2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.

• EFT protection of data

lines in accordance with

IEC 61000-4-4

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty

cycle=4 per minute maximum.

• Built-in strain relief

• Fast response time:

typically less than 1.0ps

from 0V to BV min

Functional Diagram

Applications

TVS Components are ideal for the protection of I/O

Interfaces, V_CCbus and other vulnerable circuits used in

Telecom, Computer, Industrial and Consumer electronic

applications.

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 04/06/20

12 3 4 5 6

中文翻译

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SMBJ9.0A-HR 替代型号

型号	品牌	替代类型	描述	数据表
SMBJ9.0A	LITTELFUSE	完全替代	Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Suppressors
SMBJ9.0A-HRA	LITTELFUSE	类似代替	TVS DIODE 9V 15.4V DO214AA

与SMBJ9.0A-HR相关器件

型号	品牌	获取价格	描述	数据表
SMBJ9.0A-HRA	LITTELFUSE	获取价格	TVS DIODE 9V 15.4V DO214AA
SMBJ9.0A-M3/52	VISHAY	获取价格	TVS DIODE 9V 15.4V DO214AA
SMBJ9.0A-M3/5B	VISHAY	获取价格	TVS DIODE 9V 15.4V DO214AA
SMBJ9.0AQ	MCC	获取价格	Tape :3K/Reel, 48K/Ctn;
SMBJ9.0AQ	YANGJIE	获取价格	SMB
SMBJ9.0A-Q1	ANBON	获取价格	SMB
SMBJ9.0AT3	CRYDOM	获取价格	Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ9.0AT3	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA,
SMBJ9.0A-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ9.0A-TP	MCC	获取价格	暂无描述

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