SMBJ8.5A

更新时间： 2024-11-03 22:53:47

品牌	Logo	应用领域
力特 - LITTELFUSE		二极管
页数	文件大小	规格书
4页	255K
描述
Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Supressors

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中文翻译

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数据手册
替代型号

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SMBJ8.5A 数据手册

Silicon Avalanche Diodes

600W Surface Mount Transient Voltage Supressors

SMBJ Series

FEATURES

• For surface mounted applications in order to optimize

board space

• Low profile package

• Built-in strain relief

• Glass passivated junction

• Low inductance

• Excellent clamping capability

• Repetition Rate (duty cycle): 0.01%

• Fast response time: typically less than 1.0ps from 0 Volts to

BV for unidirectional types

• Typical IR less than 1 mA above 10V

• High Temperature soldering: 250˚C/10 seconds at terminals

MAXIMUM RATINGS @25˚C AMBIENT TEMPERATURE

AND CHARACTERISTICS (unless otherwise noted)

• Plastic packages has Underwriters Laboratory

Flammability 94V-O

MECHANICAL CHARACTERISTICS

PARAMETER

VALUE

SYMBOL

UNIT

• Case:JEDEC DO214AA. Molded plastic over glass passivated

junction

Peak pulse power Dissipation on

10/1000µs waveform

Min

600

Watts

PPM

(note 1,2, FIG.1)

• Terminal: Solder plated, solderable per MIL-STD-750

Peak pulse current of on 10\1000µs

waveform (note 1, FIG.3)

Method 2026

PPM

Amps

SEE TABLE 1

100

• Polarity. Color band denotes positive end(cathode) except

Bidirectional

Peak forward Surge Current, 8.3ms

Single Half SIne Wave Superimposed

on Rated Load, (JEDEC Method)

(note 2.3)

PSM

• Standard Packaging: 12mm tape(EIA STF RS-481)

• Weight: 0.003 ounce, 0.093 gram

-55 to +150

Operating junction and Storage

Temperature Range

°C

j, sTG

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA Suffix for types SMBJ5.0 thru types

SMBJ110(e.g. SMBJ5.OC, SMBJ170CA)

Note 1. Non-repetitive current pulse, per Fig.3 and derated above

T = 25˚C per Fig.2

Note 2. Mounted on 5.0mm (0.03mm thick) Copper Pads to each

Electrical characteristics apply in both directions

terminal

Note 3. 8.3 ms single half sine-wave, or equivalent square wave,

Duty cycle= 4 pulses per minute

w w w. l i t t e l f u s e . c o m

12 3 4

中文翻译

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SMBJ8.5A 替代型号

型号	品牌	替代类型	描述	数据表
1SMB8.5AT3G	LITTELFUSE	完全替代	Trans Voltage Suppressor Diode, 600W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ6.5	LITTELFUSE	类似代替	Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Suppressors
SMBJ6.5A	LITTELFUSE	功能相似	Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Suppressors

与SMBJ8.5A相关器件

型号	品牌	获取价格	描述	数据表
SMBJ8.5A / CA	SWST	获取价格	瞬态电压抑制管
SMBJ8.5A.TF	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA,
SMBJ8.5A/54	VISHAY	获取价格	TVS DIODE 8.5V 14.4V DO214AA
SMBJ8.5A/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ8.5A-13	DIODES	获取价格	暂无描述
SMBJ8.5A-13-F	DIODES	获取价格	600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SMBJ8.5ACA	STMICROELECTRONICS	获取价格	Stand off voltage range: from 5 V to 188 V
SMBJ8.5AD / CAD	SWST	获取价格	瞬态电压抑制管
SMBJ8.5A-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ8.5A-E3/52	VISHAY	获取价格	TVS DIODE 8.5V 14.4V DO214AA

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