Datasheet > SMBJ7.0-E3/52

SMBJ7.0-E3/52

更新时间： 2024-11-04 19:07:15

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
5页	115K
描述
Trans Voltage Suppressor Diode, 7V V(RWM), Unidirectional,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SMBJ7.0-E3/52 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.29
击穿电压标称值：	8.6 V	最大钳位电压：	13.3 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	极性：	UNIDIRECTIONAL
最大重复峰值反向电压：	7 V	子类别：	Transient Suppressors
表面贴装：	YES	Base Number Matches：	1

SMBJ7.0-E3/52 数据手册

SMBJ5.0A thru SMBJ188A

Vishay General Semiconductor

www.vishay.com

Surface Mount TRANSZORB

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

Available

• 600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

SMB (DO-214AA)

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

V_BR(bi-directional)

6.4 V to 231 V

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

_BR(uni-directional)

6.4 V to 231 V

5.0 V to 188 V

600 W

V_WM

P_PPM

I_FSM(uni-directional only)

T_Jmax.

100 A

MECHANICAL DATA

150 °C

Case: SMB (DO-214AA)

Polarity

Uni-directional, bi-directional

SMB (DO-214AA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, commercial

grade

Package

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, ...)

DEVICES FOR BI-DIRECTION APPLICATIONS

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3, M3, HE3, and HM3 suffix meets JESD 201 class 2

whisker test

For bi-directional devices use CA suffix (e.g. SMBJ10CA).

Electrical characteristics apply in both directions.

Polarity: for uni-directional types the band denotes cathode

end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

600

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform ⁽¹⁾⁽²⁾(fig. 1)

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

I_PPM

See next table

100

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

I_FSM

T_J, T_STG

-55 to +150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 24-Jan-2019

Document Number: 88392

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与SMBJ7.0-E3/52相关器件

型号	品牌	获取价格	描述	数据表
SMBJ7.0-E3/55	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ7.0-E3/5B	VISHAY	获取价格	TVS DIODE 7V 13.3V DO214AA
SMBJ7.0E3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ7.0E3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ7.0E3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ7.0E3TR	MICROSEMI	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
SMBJ7.0-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 600W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ7.0HE3/5B	VISHAY	获取价格	TVS DIODE 7V 13.3V DO214AA
SMBJ7.0-M3/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ7.0-M3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-21

与SMBJ7.0-E3/52相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

33
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ7.0-E3/52

SMBJ7.0-E3/52 技术参数

SMBJ7.0-E3/52 数据手册

与SMBJ7.0-E3/52相关器件

与SMBJ7.0-E3/52相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ7.0-E3/52

SMBJ7.0-E3/52 技术参数

SMBJ7.0-E3/52 数据手册

与SMBJ7.0-E3/52相关器件

与SMBJ7.0-E3/52相关文章

您还可以找

您在本页遇到什么问题？