SMBJ60A

更新时间： 2024-11-12 06:12:23

品牌	Logo	应用领域
SSC		二极管光电二极管局域网
页数	文件大小	规格书
4页	755K
描述
Transient Voltage Suppressors

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SMBJ60A 数据手册

SMBJ Series

Transient Voltage Suppressors

PRODUCT SUMMARY

Stand-off Voltage ratings from 5.0V to 440V

Peak pulse power 600W in SMB surface-mount package

FEATURES

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

Low profile package with built-in strain relief for surface-mount

Glass passivated junction

Low incremental surge resistance, excellent clamping capability

Peak pulse power capability of 600W with a 10/1000us waveform,

repetition rate (duty cycle): 0.01%

Very fast response time

High temperature soldering guaranteed:

260°C for 10 seconds at terminals

MECHANICAL DATA

Case: JEDEC DO-214AA (SMB) molded plastic over passivated chip

Terminals: Matte-Sn plated, solderable per MIL-STD-750,

Method 2026

Polarity: For uni-directional types the band denotes the cathode, which

is positive with respect to the anode under normal TVS operation.

Mounting position: Any

Weight: 0.003oz., 0.093g

Pb-free; RoHS-compliant

Devices for Bidirectional Applications

For bi-directional devices, use suffix CA (e.g. SMBJ10CA). Electrical characteristics apply in both directions.

MAXIMUM RATINGS

Rating at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

Peak pulse power dissipation with

P_PPM

I_PPM

Minimum 600

See Next Table

100

a 10/1000us waveform ^(1,2)(see Fig. 1)

Peak pulse current with a 10/1000us waveform ⁽¹⁾

Peak forward surge current, 8.3ms single half sine-wave

uni-directional only ⁽²⁾

I_FSM

Typical thermal resistance, junction to ambient ⁽³⁾

R_θJA

R_θJL

100

°C/W

°C

Typical thermal resistance, junction to lead

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

Notes: 1. Non-repetitive current pulse, per Fig. 3 and derated above T_A=25°C per Fig. 2.

2. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal

3. Mounted on minimum recommended pad layout

9/21/2006 Rev.4.01

www.SiliconStandard.com

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