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SMBJ2K4.5

更新时间： 2024-11-28 22:32:39
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
1页 153K
描述
TRANSIENT VOLTAGE SUPPRESSOR

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中文翻译

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SMBJ2K4.5 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DO-214AA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.92
最小击穿电压：5.4 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e0最大非重复峰值反向功率耗散：300 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：1.38 W
认证状态：Not Qualified最大重复峰值反向电压：4.5 V
表面贴装：YES技术：AVALANCHE
端子面层：TIN LEAD端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SMBJ2K4.5 数据手册

  
SMBJ2K3.0  
thru  
8700 E. Thomas Road  
Scottsdale, AZ 85251  
Tel: (480) 941-6300  
Fax: (480) 947-1503  
SMBJ2K5.0  
TRANSIENT VOLTAGE SUPPRESSOR  
DESCRIPTION  
SMBJ surface mount package is utilized where power and space is a requirement.  
Designed for effective protection of power bus lines from voltage spikes originating  
from ESD, line noise (EFT), and induced lighting defined by IEC 1000-4-2, 1000-  
4-4, and 1000-4-5 respectively. Advanced technology provides lowest clamping  
voltage with surface mount packaging minimizing parasitic inductance.  
FEATURES  
·
·
·
·
·
2000 watts Peak Pulse Power 8/20 ms  
For surface Mount Applications (flat handling surface for accurate placement).  
Voltage and reverse leakage lowest available  
High surge capacity provides transient protection for low voltage circuits  
UL 94V-0 Flammability Classification  
MECHANICAL CHARACTERISTICS  
·
·
·
·
·
·
·
·
CASE: DO-214AA (SMBJ) outline  
Terminals solderable per MIL-STD-750, Method 2026  
Maximum temperature for soldering: 260°C for 10 seconds maximum  
LEAD MATERIAL: Copper  
LEAD FINISH: Tin plate  
POLARITY: Cathode end is banded  
WEIGHT: 0.2 grams  
MOUNTING POSITION: Any  
MAXIMUM RATINGS  
·
·
·
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Steady state Power Dissipation: 3.0 watt @ TL £ 75°C  
Repetition rate (duty cycle): .01%  
Surge Power: 300 watts @ 10/1000 ms or 2000 watts @ 8/20 ms  
IPP and VC below are @ 8/20 ms  
Electrical Characteristics @ 25°C unless otherwise specified  
V
MIN  
VOLTS  
(BR)  
I
VWM  
IP  
IPP  
A
VC  
a V(BR)  
(BR)  
TYPE  
SMBJ  
mA  
VOLTS  
µA  
VOLTS  
%ºC  
DIMENSIONS IN INCHES  
A
B
C
D
E
F
G
2K3.0  
2K3.3  
2K4.0  
2K4.5  
2K5.0  
4.3  
4.6  
5.0  
5.4  
5.9  
50  
50  
50  
50  
50  
3.0  
3.3  
4.0  
4.5  
5.0  
1500  
700  
400  
50  
10  
10  
10  
10  
10  
5.4  
5.8  
6.3  
6.6  
7.6  
+0/-.05  
±.025  
±.030  
±.040  
±.050  
MIN .077 .160 .130 .205 .075 .030 .004  
MAX .083 .180 .155 .220 .095 .060 .008  
DIMENSIONS IN MILLIMETERS  
MIN 1.96 4.06 3.30 5.21 1.90 0.760 .101  
MAX 2.10 4.57 3.94 5.59 2.41 1.520  
5
Peak Pulse Power vs. Pulse Time  
8X20 Pulse Wave Form  
MSC0977.PDF  
ISO 9001 CERTIFIED  
REV E 11/23/98  
1

中文翻译

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与SMBJ2K4.5相关器件

型号 品牌 获取价格 描述 数据表
SMBJ2K4.5E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 300W, 4.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ2K4.5E3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 300W, 4.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ2K4.5E3TR MICROSEMI

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 		300W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
SMBJ2K4.5TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 300W, 4.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ2K4.5TRE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 4.5V V(RWM), Unidirectional,
SMBJ2K5.0 MICROSEMI

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 		TRANSIENT VOLTAGE SUPPRESSOR
SMBJ2K5.0E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ2K5.0E3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBJ2K5.0E3TR MICROSEMI

获取价格

 		300W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
SMBJ2K5.0TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-21

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