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SMBJ2K4.5E3 PDF预览

SMBJ2K4.5E3

更新时间： 2024-11-29 19:18:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
3页 168K
描述
Trans Voltage Suppressor Diode, 300W, 4.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN

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SMBJ2K4.5E3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DO-214AA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.84
最小击穿电压：5.4 V最大钳位电压：6.6 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
最大非重复峰值反向功率耗散：300 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性：UNIDIRECTIONAL
最大功率耗散：1.38 W认证状态：Not Qualified
最大重复峰值反向电压：4.5 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：MATTE TIN端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

SMBJ2K4.5E3 数据手册

 浏览型号SMBJ2K4.5E3的Datasheet PDF文件第2页浏览型号SMBJ2K4.5E3的Datasheet PDF文件第3页 
SMBJ2K3.0 thru SMBJ2K5.0, e3  
SMBG2K3.0 thru SMBG2K5.0, e3  
UNIDIRECTIONAL LOW VOLTAGE  
SURFACE MOUNT TRANSIENT  
VOLTAGE SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The SMBJ2K3.0-5.0 or SMBG2K3.0-5.0 series of surface mount 2000 Watt  
unidirectional Transient Voltage Suppressors (TVSs) provide low voltage  
transient protection in a Working Standoff Voltage (VWM) selections from 3.0  
to 5.0 volts. Response time of clamping action is virtually instantaneous and  
may also be used for protection from ESD or EFT per IEC61000-4-2 and  
IEC61000-4-4, or for inductive switching environments and induced RF.  
They can also be used for protecting other sensitive components from  
secondary lightning effects per IEC61000-4-5 and class levels defined  
herein. Microsemi also offers numerous other TVS products to meet higher  
and lower power demands and special applications. Also available in military  
equivalent screening levels by adding a prefix identifier as further described  
in the Features section. Microsemi also offers numerous other TVS products  
to meet higher and lower power applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Suppresses transients up to 2000 watts @ 8/20 µs (see  
Figure 1 and 2)  
•
•
Selections for 3.0 to 5.0 V Working Peak Standoff  
(VWM) voltage  
•
•
Fast response  
Economical unidirectional TVS series in surface  
mount with flat handling surface for accurate  
placement  
Optional 100% screening for avionics grade is available  
by adding MA prefix to part number for added 100%  
temperature cycle -55oC to +125oC (10X) as well as surge  
(3X) and 24 hours HTRB with post test VZ & IR (in the  
operating direction for unidirectional or both directions for  
bidirectional)  
•
Voltage and reverse (leakage) current lowest  
available  
•
Protects sensitive components such as IC’s,  
CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
•
•
Options for screening in accordance with MIL-PRF-19500  
for JAN, JANTX, and JANTXV are available by adding  
MQ, MX, or MV prefixes respectively to part numbers.  
•
•
Protection from switching transients & induced RF  
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively  
Moisture classification is Level 1 with no dry pack required  
per IPC/JEDEC J-STD-020B  
•
Secondary lightning protection per IEC61000-4-5  
with 42 Ohms source impedance for Class 1  
•
•
RoHS Compliant devices available by adding “e3” suffix  
Consult factory for bidirectional options  
MAXIMUM RATINGS  
• Peak Pulse Power dissipation at 25oC: 2000 watts at 8/20  
μs or 300 Watts at 10/1000 μs (also see Figure 1 and 4)  
MECHANICAL AND PACKAGING  
•
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
• Clamping Voltage at 10 Amps @ 8/20 μs shown on page 2  
• Impulse repetition rate (duty factor): 0.01% maximum  
• tclamping (0 volts to V(BR) min.): < 100 ps  
•
•
FINISH: Tin-Lead or RoHS compliant annealed  
matte-Tin plating over copper readily solderable  
per MIL-STD-750, method 2026  
MARKING: Body marked without SMBJ or SMBG  
part number prefix, e.g. 2K3.0, 2K3.3, 2K4.0, etc.  
• Operating and Storage temperature: -65oC to +150oC  
• Thermal resistance: 25 ºC/W junction to lead, or 90ºC/W  
junction to ambient when mounted on FR4 PC board (1oz  
Cu) with recommended footprint (see last page)  
•
•
POLARITY: Band denotes cathode  
WEIGHT: 0.1 grams (approximate)  
• Steady-State Power dissipation: 5 watts at TL = 25oC, or  
1.38 watts at TA = 25ºC when mounted on FR4 PC board  
with recommended footprint  
•
TAPE & REEL option: Standard per EIA-481-1-A  
with 12 mm tape, 750 per 7 inch reel or 2500 per  
13 inch reel (add “TR” suffix to part number)  
• Forward Voltage at 25oC: 3.5 Volts maximum @ 30 Amp  
•
See package dimensions on last page  
peak impulse of 8.3 ms half-sine wave (unidirectional only)  
• Solder temperatures: 260oC for 10 s (maximum)  
Copyright © 2007  
6-21-2007 REV G  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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 		Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
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 		300W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
SMBJ2K5.0TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
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 		Transient Voltage Suppressors

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