Datasheet > SMBJ30

SMBJ30

更新时间： 2024-02-15 10:01:09

品牌	Logo	应用领域
DAESAN		二极管
页数	文件大小	规格书
4页	709K
描述
POWER 600Watts VOLTAGE 5.0 to 188 Volts

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技术参数
数据手册

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SMBJ30 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.62
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SMBJ30 数据手册

POWER 600Watts

VOLTAGE 5.0 to 188 Volts

SMBJ5.0 THRU SMBJ188CA

Features

· Underwriters Laboratory recognition under UL standard

for safety 497B : Isolated loop curcuit protection

· Low profile package with built-in strain relief for surface

mounted applications

DO-214AA (SMB)

· Glass passivated junction

· Low incremental surge resistance, excellent clamping

capability

· 600W peak pulse power capability with a 10/1000μS

waveform, repetition rate(duty cycle) : 0.01%

· Very fast response time

0.083(2.11)

0.075(1.91)

0.155(3.94)

0.130(3.30)

0.185(4.70)

0.160(4.06)

· High temperature soldering guaranteed : 250℃/10 seconds

at terminals

0.012(0.31)

0.006(0.15)

0.096(2.44)

0.083(2.13)

Mechanical Data

· Case : JEDEC DO-214AA(SMB) molded plastic

over passivated chip

· Terminals : Solder plated , solderable per

MIL-STD-750, method 2026

0.008(0.203)

MAX.

0.050(1.27)

0.030(0.76)

0.220(5.59)

0.200(5.08)

· Polarity : For uni-directional types the band denotes

the cathode, which is positive with respect to the

anode under normal TVS operation

· Mounting Position : Any

Dimensions in inches and (millimeters)

· Weight : 0.003 ounce, 0.093 gram

Devices For Bidirectional Applications

· For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA).

Electrical characteristics apply in both directions.

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified)

Symbols

Values

Units

Peak pulse power dissipation with a 10/1000μS waveform (Note 1,2. Fig. 1)

PPM

Minimum 600

Watts

Peak pulse current with a waveform (Note 1)

PPM

See next table

100

Amps

Peak forward surge current, 8.3mm single half sine-wave unidirectional only (Note 2)

FSM

Typical thermal resistance, junction to ambient (Note 3)

Typical thermal resistance, junction to lead

℃/W

℃

RθJA

RθJL

100

Operating junction and storage temperature range

,TSTG

-55 to +150

Notes:

(1) Non repetitive current pulse, per Fig.3 and derated above TA=25℃ per Fig.2

(2) Mounted on 0.2×0.2"(5.0×5.0mm) copper pads to each terminal

(3) Mounted on minimum recommended pad layout

12 3 4

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与SMBJ30相关器件

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SMBJ30(C)	BYTES	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS	获取价格
SMBJ30(C)A	BYTES	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS	获取价格
SMBJ30(C)AS	GOOD-ARK	TVS	获取价格
SMBJ30/2	VISHAY	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA, PLASTI	获取价格
SMBJ30/TR13	MICROSEMI	Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-2	获取价格
SMBJ30/TR7	MICROSEMI	Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-2	获取价格