Datasheet > SMBJ30

SMBJ30

更新时间： 2024-02-04 11:50:24

品牌	Logo	应用领域
DAESAN		二极管
页数	文件大小	规格书
4页	709K
描述
POWER 600Watts VOLTAGE 5.0 to 188 Volts

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技术参数
数据手册

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SMBJ30 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.62
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SMBJ30 数据手册

RATINGS AND CHARACTERISTIC CURVES SMBJ5.0 THRU SMBJ188CA

Fig. 2ÐP uls e Derating C ur ve

Fig. 1ÐP eak P uls e Power R ating C urve

100

0.2 x 0.2" (0.5 x 0.5mm)

C opper P ad Areas

0.1

150

175

200

100

125

0.1μ

1.0

1 0

μs

100

1.0ms

10ms

t_{d ,}P ulse Width (sec.)

T_A

Ambient Temperature ( C )

Fig. 3Ð P uls e Waveform

Fig. 4ÐT ypical J unction C apacitance

6,000

1,000

150

100

Measured at

Zero Bias

T_J= 25 ^oC

P ulse Width (td)

tr = 10μs

is defined as the point

where the peak current

decays to 50% of I_{P P M}

P eak Value

I_{P P M}

Half Value IP P

I_{P P M}

V_R, Measured at

S tand-Off

Voltage, V_WM

100

10/1000

aveform

as defined by R .E .A.

Uni-Directional

Bi-Directional

T_J= 25 ^oC

f = 1.0MHz

Vsig = 50mVp-p

1.0

3.0

4.0

2.0

100

200

V_WM

R everse S tand-Off Voltage (V)

t , Time (ms)

Fig. 6ÐMaximum Non-R epetitive P eak

Forward S ugr e C urrent

Fig. 5ÐTypical Trans ient Thermal

Impedance

100

200

100

8.3ms S ingle Half S ine-Wave

(J E DE C Method)

Unidirectional Only

1.0

0.1

0.001

0.01

0.1

100

1000

100

Number of C ycles at 60H_Z

t_p, P ulse Duration (sec)

1 2 34

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