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SMBJ28-M3/5B

更新时间： 2024-11-30 07:12:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 93K
描述
Trans Voltage Suppressor Diode, 600W, 28V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

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SMBJ28-M3/5B 数据手册

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New Product  
SMBJ5.0 thru SMBJ188CA  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 600 W peak pulse power capability with a 10/1000 μs  
waveform, repetitive rate (duty cycle): 0.01 %  
• Excellent clamping capability  
DO-214AA (SMB J-Bend)  
• Very fast response time  
• Low incremental surge resistance  
PRIMARY CHARACTERISTICS  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
VWM  
5.0 V to 188 V  
PPPM  
600 W  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
I
FSM (uni-directional only)  
TJ max.  
100 A  
• Halogen-free according to IEC 61249-2-21 definition  
150 °C  
MECHANICAL DATA  
Case: DO-214AA (SMBJ)  
Molding compound meets UL 94 V-0 flammability rating  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional use C or CA suffix (e.g. SMBJ10CA).  
Electrical characteristics apply in both directions.  
M3 suffix meets JESD 201 class 1A whisker test  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
600  
UNIT  
W
(1)(2)  
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)  
Peak pulse current with a 10/1000 μs waveform  
PPPM  
(1)  
IPPM  
See next table  
100  
A
(2)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only  
Operating junction and storage temperature range  
IFSM  
A
TJ, TSTG  
- 55 to + 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Document Number: 89284  
Revision: 20-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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