Surface Mount Transient Voltage Suppressors (TVS)
SMBJ Series
5.0 To 440 V
600W
Uni-directional
Bi-directional
Description
The SMBJ series is designed specifically to protect sensitive electronic
equipment from voltage transients induced by lightning and other transient
voltage events.
Features
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For surface mounted applications in order to optimize board space
Low leakage
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Uni and Bidirectional unit
Glass passivated junction
Low inductance
Excellent clamping capability
600W Peak power capability at 10 × 1000µs waveform Repetition rate
(duty cycle):0.01%
Functional Diagram
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Fast response time: typically less than 1.0ps from 0 Volts to VBR min
Typical IR less than 5μA above 12V.
High Temperature soldering: 260°C/40 seconds at terminals
Typical maximum temperature coefficient ΔVBR = 0.1% ×
VBR@25°C× ΔT
Bi-directional
Cathode
Anode
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Plastic package has Underwriters Laboratory Flammability 94V-0
Matte tin lead–free Plated
Uni-direction
Halogen free and RoHS compliant
Typical failure mode is short from over-specified voltage or current
Whisker test is conducted based on JEDEC JESD201A per its table
4a and 4c
Applications
TVS devices are ideal for the protection of I/O interfaces, VCC
bus and other vulnerable circuits used in Telecom, Computer,
Industrial and Consumer electronic applications.
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IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)
ESD protection of data lines in accordance with IEC 61000-4-2
(IEC801-2)
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EFT protection of data lines in accordance with IEC 61000-4-4
(IEC801-4)
Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Pulse Power Dissipation with a 10/1000µs waveform (Fig.1)(Note
1), (Note 2)
PPPM
600
Watts
Peak Pulse Current with a 10/1000µs waveform.(Note1,Fig.3)
Power Dissipation on Infinite Heat Sink at TL=75°C
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only
(Note 4)
IPP
PM(AV)
IFSM
See Next Table
Amps
Watt
5.0
100
Amps
VF
3.5/5.0
Voltage
Operating junction and Storage Temperature Range.
TJ , TSTG
-55 to +150
°C
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2.
2. Mounted on 5.0mm x 5.0mm (0.03mm thick) Copper Pads to each terminal.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minutes maximum.
4. VF < 3.5V for VBR < 200V and VF< 6.5V for VBR > 201V.
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Revision October 18, 2013
1 / 7
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.