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SMBJ12A822_NL PDF预览

SMBJ12A822_NL

更新时间: 2024-02-22 18:54:34
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管光电二极管局域网
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SMBJ12A822_NL 数据手册

 浏览型号SMBJ12A822_NL的Datasheet PDF文件第2页 
SMBJ12A822  
DO-214AA(SMB)  
Color Band Denotes Cathode  
Device Marking:LE.  
600 Watt Unidirectional Transient Voltage Suppressor  
Absolute Maximum Ratings (Note 1)  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
PPPM  
IPPM  
IFSM  
600  
17.5  
100  
W
A
Peak Pulse Power Dissipation on 10/1000 s waveform  
µ
Peak Pulse Current on 10/1000µs waveform  
Non-repetitive Peak Forward Surge Current superimposed on rated  
load (JEDEC method)(Note 2)  
A
Note 1) These ratings are limiting values above which serviceability of any semiconductor device may be impaired.  
Note 2) Measured on 8.3ms single half-sine wave or equivalent square wave. Duty cycle=4 pulses per minute maximum.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
Thermal Resistance from Junction to Ambient  
Thermal Resistance from Junction to Leads  
Storage Temperature Range  
100  
20  
RθJA  
RθJL  
TSTG  
TJ  
°C/W  
°C/W  
°C  
-65 to +175  
-65 to +150  
Operating Junction Temperature  
°C  
Electrical Characteristics TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VBR  
Breakdown Voltage at IT = 1.0mA  
13.2 – 14.3  
V
Maximum Temperature coefficient of VBR  
Reverse Stand-off Voltage  
0.084  
12  
αT  
VRWM  
IR  
%/°C  
V
Maximum Reverse Leakage Current @VRWM  
Maximum Clamping Voltage @IPPM  
5
µA  
VC  
15.6  
V
2002 Fairchild Semiconductor Corporation  
SMBJ12A822, Rev. B  

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