Datasheet > SMBJ11CHE3/5B

SMBJ11CHE3/5B

更新时间： 2024-11-14 10:40:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	105K
描述
Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN

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SMBJ11CHE3/5B 数据手册

SMBJ5.0 thru SMBJ188CA

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available inuni-directional and bi-directional

• 600 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

DO-214AA (SMB J-Bend)

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

V_WM

P_PPM

5.0 V to 188 V

600 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

I_FSM(uni-directional only)

T_Jmax.

100 A

150 °C

MECHANICAL DATA

Case: DO-214AA (SMBJ)

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use C or CA suffix

(e.g. SMBJ10CA).

Electrical characteristics apply in both directions.

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

600

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾⁽²⁾(Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

I_PPM

See next table

100

I_FSM

T_J, T_STG

- 55 to + 150

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number: 88392

Revision: 04-Sep-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5 6

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与SMBJ11CHE3/5B相关器件

型号	品牌	获取价格	描述	数据表
SMBJ11CP	MCC	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, SMBJ, 2 PIN, Transient Suppresso
SMBJ11C-TP-HF	MCC	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ11CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 11V V(RWM), Bidirectional,
SMBJ11D / CD	SWST	获取价格	瞬态电压抑制管
SMBJ11E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ11-E3	VISHAY	获取价格	Trans Voltage Suppressor Diode, 11V V(RWM), Unidirectional,
SMBJ11-E3/52	VISHAY	获取价格	TVS DIODE 11V 20.1V DO214AA
SMBJ11-E3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 11V V(RWM), Unidirectional,
SMBJ11E3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ11E3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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