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SMBJ11 PDF预览

SMBJ11

更新时间: 2024-01-10 08:59:24
品牌 Logo 应用领域
海德 - HDSEMI 二极管
页数 文件大小 规格书
7页 1303K
描述
SMB Plastic-Encapsulate Diodes

SMBJ11 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.09最大击穿电压:14.9 V
最小击穿电压:12.2 V击穿电压标称值:13.55 V
最大钳位电压:20.1 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.38 W认证状态:Not Qualified
最大重复峰值反向电压:11 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Tin/Lead (Sn90Pb10)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SMBJ11 数据手册

 浏览型号SMBJ11的Datasheet PDF文件第2页浏览型号SMBJ11的Datasheet PDF文件第3页浏览型号SMBJ11的Datasheet PDF文件第4页浏览型号SMBJ11的Datasheet PDF文件第5页浏览型号SMBJ11的Datasheet PDF文件第6页浏览型号SMBJ11的Datasheet PDF文件第7页 
SMBJ SERIES  
SMB Plastic-Encapsulate Diodes  
Transient Voltage Suppressor Diodes  
Features  
PPP  
VRWM  
1500W  
5.0V- 440V  
SMB  
Glass passivated chip  
Applications  
Clamping Voltage  
Marking  
SMBJ  
XXCA/XXA/XX  
Bi-directional  
Uni-direction  
:
XX From 5.0 To 440  
Max  
Item  
Peak power dissipation  
Peak pulse current  
Symbol Unit  
Conditions  
with a 10/1000us waveform  
PPPM  
W
A
1500  
with a 10/1000us waveform  
On infinite heat sink at TL=75  
IPPM  
See Next Table  
6.5  
W
PD  
Power dissipation  
8.3 ms single half sine-wave unidirectional only  
IFSM  
A
200  
Peak forward surge current  
Operating junction and  
storage temperature range  
TJ,TSTG  
-55 to +150  
Electrical CharacteristicsT =25Unless otherwise specified)  
a
Max  
Item  
Symbol Unit  
Conditions  
VF  
V
3.5/5.0  
Maximum instantaneous forward  
Voltage  
at 100A for unidirectional only  
RθJL  
RθJA  
/W  
/W  
75  
15  
junction to lead  
Thermal resistance  
junction to ambient  
Notes:  
(1)  
(2)  
(3)  
Non-repetitive current pulse, per Fig. 3 and derated above TA= 25per Fig.2.  
Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal  
VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
1
H
igh Diode Semiconductor  

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