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SMBJ110 PDF预览

SMBJ110

更新时间: 2024-11-13 22:59:07
品牌 Logo 应用领域
EIC 瞬态抑制器二极管
页数 文件大小 规格书
4页 114K
描述
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

SMBJ110 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.11Is Samacsys:N
其他特性:EXCELLENT CLAMPING CAPABILITY, PRSM-MIN最大击穿电压:149 V
最小击穿电压:122 V击穿电压标称值:138.2 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大重复峰值反向电压:110 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SMBJ110 数据手册

 浏览型号SMBJ110的Datasheet PDF文件第2页浏览型号SMBJ110的Datasheet PDF文件第3页浏览型号SMBJ110的Datasheet PDF文件第4页 
ELECTRONICS INDUSTRY (USA) CO., LTD.  
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND  
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com  
SURFACE MOUNT TRANSIENT  
SMBJ 5.0 - 170A  
VOLTAGE SUPPRESSOR  
VBR : 6.8 - 200 Volts  
PPK : 600 Watts  
SMB (DO-214AA)  
1.1 ? 0.3  
FEATURES :  
* 600W surge capability at 1ms  
* Excellent clamping capability  
* Low inductance  
0.22 ? 0.07  
2.0 ? 0.1  
* Response Time Typically < 1ns  
* Typical IR less then 1mA above 10V  
2.3 ? 0.2  
3.6 ? 0.15  
MECHANICAL DATA  
* Case : SMB Molded plastic  
Dimensions in millimeter  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Lead Formed for Surface Mount  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.108 gram  
MAXIMUM RATINGS  
Rating at Ta = 25 ?C ambient temperature unless otherwise specified.  
Rating  
Peak Pulse Power Dissipation on 10/1000ms (1)  
waveform (Notes 1, 2, Fig. 3)  
Symbol  
PPPM  
Value  
Minimum 600  
See Table  
Units  
Watts  
Amps  
Peak Pulse Current on 10/1000ms  
waveform (Note 1, Fig. 5)  
IPPM  
Peak forward Surge Current  
8.3 ms single half sine-wave superimposed on  
rated load ( JEDEC Method )(Notes 2, 3)  
Maximum Instantaneous Forward Voltage at 50A (Note 3,4 )  
Operating Junction and Storage Temperature Range  
VFM  
See Note 3, 4  
- 65 to + 150  
Volts  
TJ, TSTG  
?C  
Note :  
(1) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25 ?C per Fig. 1  
(2) Mounted on 5.0mm2 (0.013mm thick) land areas.  
(3) Measured on 8.3ms. Single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum.  
(4) VF=3.5V for SMBJ5.0 thru SMBJ90 devices and VF=5V for SMBJ100 thru SMBJ170 devices.  
UPDATE : MAY 25, 2000  

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