Datasheet > SMBJ110

SMBJ110

更新时间： 2024-11-14 04:51:47

品牌	Logo	应用领域
DAESAN		二极管
页数	文件大小	规格书
4页	709K
描述
POWER 600Watts VOLTAGE 5.0 to 188 Volts

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中文翻译

获取价格

数据手册

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SMBJ110 数据手册

POWER 600Watts

VOLTAGE 5.0 to 188 Volts

SMBJ5.0 THRU SMBJ188CA

Features

· Underwriters Laboratory recognition under UL standard

for safety 497B : Isolated loop curcuit protection

· Low profile package with built-in strain relief for surface

mounted applications

DO-214AA (SMB)

· Glass passivated junction

· Low incremental surge resistance, excellent clamping

capability

· 600W peak pulse power capability with a 10/1000μS

waveform, repetition rate(duty cycle) : 0.01%

· Very fast response time

0.083(2.11)

0.075(1.91)

0.155(3.94)

0.130(3.30)

0.185(4.70)

0.160(4.06)

· High temperature soldering guaranteed : 250℃/10 seconds

at terminals

0.012(0.31)

0.006(0.15)

0.096(2.44)

0.083(2.13)

Mechanical Data

· Case : JEDEC DO-214AA(SMB) molded plastic

over passivated chip

· Terminals : Solder plated , solderable per

MIL-STD-750, method 2026

0.008(0.203)

MAX.

0.050(1.27)

0.030(0.76)

0.220(5.59)

0.200(5.08)

· Polarity : For uni-directional types the band denotes

the cathode, which is positive with respect to the

anode under normal TVS operation

· Mounting Position : Any

Dimensions in inches and (millimeters)

· Weight : 0.003 ounce, 0.093 gram

Devices For Bidirectional Applications

· For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA).

Electrical characteristics apply in both directions.

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified)

Symbols

Values

Units

Peak pulse power dissipation with a 10/1000μS waveform (Note 1,2. Fig. 1)

PPM

Minimum 600

Watts

Peak pulse current with a waveform (Note 1)

PPM

See next table

100

Amps

Peak forward surge current, 8.3mm single half sine-wave unidirectional only (Note 2)

FSM

Typical thermal resistance, junction to ambient (Note 3)

Typical thermal resistance, junction to lead

℃/W

℃

RθJA

RθJL

100

Operating junction and storage temperature range

,TSTG

-55 to +150

Notes:

(1) Non repetitive current pulse, per Fig.3 and derated above TA=25℃ per Fig.2

(2) Mounted on 0.2×0.2"(5.0×5.0mm) copper pads to each terminal

(3) Mounted on minimum recommended pad layout

12 3 4

中文翻译

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与SMBJ110相关器件

型号	品牌	获取价格	描述	数据表
SMBJ110(C)	BYTESONIC	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
SMBJ110(C)A	BYTESONIC	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
SMBJ110(C)AS	GOOD-ARK	获取价格	TVS
SMBJ110.TF	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA,
SMBJ110/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ110A	GOOD-ARK	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SMBJ110A	MICROSEMI	获取价格	UNI- AMD BI-DIRECTIONAL SURFACE MOUNT
SMBJ110A	HY	获取价格	SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS
SMBJ110A	MCC	获取价格	Transient Voltage Suppressor 5.0 to 170 Volts 600 Watt
SMBJ110A	DCCOM	获取价格	TECHNICAL SPECIFICATIONS OF SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR