Datasheet > SMBJ100CA

SMBJ100CA

更新时间： 2024-12-01 09:21:11

品牌	Logo	应用领域
伯恩斯 - BOURNS		二极管
页数	文件大小	规格书
5页	355K
描述
SMBJ Transient Voltage Suppressor Diode Series

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中文翻译

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数据手册
替代型号

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SMBJ100CA 数据手册

Features

Applications

■ RoHS compliant*

■ IEC 61000-4-2 ESD (Min. Level 4)

■ IEC 61000-4-4 EFT

■ Surface Mount SMB package

■ Standoff Voltage: 5.0 to 170 volts

■ Power Dissipation: 600 watts

■ IEC 61000-4-5 Surge

SMBJ Transient Voltage Suppressor Diode Series

General Information

The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

increasingly smaller electronic components.

Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AA (SMB)

size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 170 V and Breakdown

Voltage up to 200 V. Typical fast response times are less than 1.0 ns for unidirectional devices and less than 5.0 ns for bidirectional devices

from 0 V to Minimum Breakdown Voltage.

Bourns^®Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the ﬂat conﬁguration

minimizes roll away.

Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)

Parameter

Symbol

Value

Unit

(Note 1,2)

Minimum Peak Pulse Power Dissipation (T = 1 ms)

600

Watts

Peak Forward Surge Current

8.3 ms Single Half Sine Wave Superimposed on Rated Load

(JEDEC Method)

100

Amps

FSM

(Note 3)

Steady State Power Dissipation @ TL = 75 °C

5.0

Watts

Volts

M(AV)

Maximum Instantaneous Forward Voltage @ I = 50 A

(Note 5)

(For Unidirectional Units Only)

Operating Temperature Range

Storage Temperature Range

-55 to +150

-55 to +175

°C

STG

1. Non-repetitive current pulse, per Pulse Waveform graph and derated above T = 25 °C per Pulse Derating Curve.

2. Thermal Resistance Junction to Lead.

3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).

4. Single Phase, Half Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.

= 3.5 V on SMBJ5.0A through SMBJ90A and V = 5.0 V on SMBJ100A through SMBJ170A.

How to Order

SMBJ 5.0 CA

Package

SMBJ = SMA/DO-214AA

Working Peak Reverse Voltage

5.0 = 5.0 V

(Volts)

RWM

Sufﬁx

A = 5 % Tolerance Unidirectional Device

CA = 5 % Tolerance Bidirectional Device

Asia-Paciﬁc:

Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116

Europe:

Tel: +41-41 768 5555 • Fax: +41-41 768 5510

The Americas:

Tel: +1-951 781-5500 • Fax: +1-951 781-5700

www.bourns.com

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.

Speciﬁcations are subject to change without notice.

Customers should verify actual device performance in their speciﬁc applications.

12 3 4 5

中文翻译

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SMBJ100CA 替代型号

型号	品牌	替代类型	描述	数据表
SMBJ100CA-M3/52	VISHAY	类似代替	TVS DIODE 100V 162V DO214AA
SMBJ100CA-TR	STMICROELECTRONICS	功能相似	TRANSILTM
SMBJ100CA	LITTELFUSE	功能相似	Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Suppressors

与SMBJ100CA相关器件

型号	品牌	获取价格	描述	数据表
SMBJ100CA/TR13	YAGEO	获取价格	Trans Voltage Suppressor Diode,
SMBJ100CA-13-F	DIODES	获取价格	600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SMBJ100CA-7	DIODES	获取价格	Trans Voltage Suppressor Diode, 600W, 100V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
SMBJ100CA-AT	UNSEMI	获取价格	Surface Mount Transient Voltage Suppressors
SMBJ100CA-AT	YAGEO	获取价格	瞬态抑制二极管 (车用)
SMBJ100CA-AU	JJM	获取价格	车规瞬态电压抑制二极管
SMBJ100CAE3	MICROSEMI	获取价格	SURFACE MOUNT 600 Watt Transient Voltage Suppressor
SMBJ100CA-E3/52	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2
SMBJ100CA-E3/5B	VISHAY	获取价格	TVS DIODE 100V 162V DO214AA
SMBJ100CAE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

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