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SMBJ100CAT3 PDF预览

SMBJ100CAT3

更新时间: 2024-12-01 19:48:55
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网光电二极管
页数 文件大小 规格书
3页 456K
描述
Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon, DO-214AA,

SMBJ100CAT3 技术参数

是否无铅: 含铅生命周期:Transferred
包装说明:R-PDSO-C2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.49其他特性:UL RECOGNIZED
最大击穿电压:128 V最小击穿电压:111 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:BIDIRECTIONAL
最大功率耗散:1.5 W认证状态:Not Qualified
表面贴装:YES技术:AVALANCHE
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

SMBJ100CAT3 数据手册

 浏览型号SMBJ100CAT3的Datasheet PDF文件第2页浏览型号SMBJ100CAT3的Datasheet PDF文件第3页 

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Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon, DO-214AA,