Datasheet > SMBG9.0C-E3

SMBG9.0C-E3

更新时间： 2024-11-02 05:35:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	121K
描述
Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Bidirectional, 1 Element, Silicon, DO-215AA, PLASTIC, SMBG, 2 PIN

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SMBG9.0C-E3 数据手册

SMBG5.0 thru 188CA

Vishay Semiconductors

formerly General Semiconductor

Surface Mount TRANSZORB^®

Transient Voltage Suppressors

Stand-off Voltage 5.0 to 188V

Peak Pulse Power 600W

DO-215AA (SMBG)

Cathode Band

Mounting Pad Layout

0.083 (2.10)

0.077 (1.96)

0.155 (3.94)

0.130 (3.30)

0.165 (4.19)

0.085 (2.16)

0.060(1.27)

Dimensions in inches

and (millimeters)

0.180 (4.57)

0.160 (4.06)

0.095 (2.41)

0.075 (1.90)

0.008 (0.20)

0.004 (0.10)

0.016 (0.41)

0.006 (0.15)

0.058 (1.47)

0.038 (0.97)

SEATING

PLANE

0.030 (0.76)

0.015 (0.38)

0.020

(0.51) Max.

0.255 (6.48)

0.235 (5.97)

Features

Mechanical Data

• Underwriters Laboratory Recognition under UL standard

for safety 497B: Isolated Loop Circuit Protection

Case: JEDEC DO-215AA molded plastic over

passivated junction

Terminals: Solder plated, solderable per

MIL-STD-750, Method 2026

• Low profile package with built-in strain relief for surface

mounted applications

Polarity: For unidirectional types the band denotes the

cathode, which is positive with respect to the anode

under normal TVS operation

Weight: 0.003 oz., 0.093 g

Flammability: Epoxy is rated UL 94V-0

• Glass passivated junction

• Low incremental surge resistance, excellent clamping

capability

• 600W peak pulse power capability with a 10/1000µs

waveform, repetition rate (duty cycle): 0.01%

Packaging Codes – Options (Antistatic):

51 – 2K per Bulk box, 20K/carton

• Very fast response time

• High temperature soldering guaranteed:

250°C/10 seconds at terminals

52 – 750 per 7" plastic Reel (12mm tape), 15K/carton

5B – 3.2K per 13" plastic Reel (12mm tape), 32K/carton

Devices for Bidirectional Applications

For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA). Electrical characteristics apply in both directions.

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

P_PPM

I_PPM

Value

Minimum 600

See Table Below

100

Unit

Peak pulse power dissipation with

a 10/1000µs waveform⁽¹⁾⁽²⁾(Fig. 1)

Peak pulse current with a 10/1000µs waveform⁽¹⁾

Peak forward surge current 8.3ms single half sine-wave

uni-directional only⁽²⁾

I_FSM

Typical thermal resistance, junction to ambient⁽⁴⁾

100

°C/W

°C

θJA

Typical thermal resistance, junction to lead

θJL

Operating junction and storage temperature range

T_J, T_STG

–55 to +150

Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above T = 25°C per Fig. 2

(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal

(3) Mounted on minimum recommended pad layout

Document Number 88456

24-Jul-03

www.vishay.com

12 3 4 5

中文翻译

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与SMBG9.0C-E3相关器件

型号	品牌	获取价格	描述	数据表
SMBG9.0C-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG9.0C-E3/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 9V V(RWM), Bidirectional,
SMBG9.0C-E3/55	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG9.0C-E3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 9V V(RWM), Bidirectional,
SMBG9.0CE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG9.0CE3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG9.0CHE3/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 9V V(RWM), Bidirectional,
SMBG9.0CHE3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG9.0C-HE3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG9.0CTR	MICROSEMI	获取价格	600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC PACKAGE-2

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