Datasheet > SMBG9.0-E3/55

SMBG9.0-E3/55

更新时间： 2024-11-02 10:42:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	97K
描述
Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMBG9.0-E3/55 数据手册

SMBG5.0 thru SMBG188CA

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in Unidirectional and Bidirectional

• 600 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty cycle):

0.01 %

• Excellent clamping capability

DO-215AA (SMBG)

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020C, LF max peak

of 260 °C

• Solder Dip 260 °C, 40 seconds

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

MAJOR RATINGS AND CHARACTERISTICS

TYPICAL APPLICATIONS

V_WM

P_PPM

5.0 V to 188 V

600 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

_FSM(Unidirectional only)

T_jmax.

100 A

150 °C

DEVICES FOR BIDIRECTION APPLICATIONS

For bidirectional devices use C or CA suffix

(e.g. SMBG10CA).

MECHANICAL DATA

Case: DO-215AA (SMBG)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

Electrical characteristics apply in both directions.

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: For unidirectional types the band denotes

cathode end, no marking on bidirectional types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

Minimum 600

see next table

100

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ^(1,2)(see Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

I_PPM

I_FSM

T_J, T_STG

- 55 to + 150

°C

Note:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number 88456

08-Sep-06

www.vishay.com

12 3 4 5 6

中文翻译

下载PDF

与SMBG9.0-E3/55相关器件

型号	品牌	获取价格	描述	数据表
SMBG9.0-E3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBG9.0-HE3/52	VISHAY	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN
SMBG9.0-TP	MCC	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-215AA, SMBG, 2 PIN
SMBG9.0TR	MICROSEMI	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC PACKAGE-2
SMBG90	MCC	获取价格	Trans Voltage Suppressor Diode, 600W, 90V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBG90	MICROSEMI	获取价格	UNI- AMD BI-DIRECTIONAL SURFACE MOUNT
SMBG90	VISHAY	获取价格	SURFACE MOUNT TRANSZORB⑩ TRANSIENT VOLTAGE SU
SMBG90/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 90V V(RWM), Unidirectional,
SMBG90/51-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC, SMBG, 2 PIN, Transient
SMBG90/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 90V V(RWM), Unidirectional,

与SMBG9.0-E3/55相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBG9.0-E3/55

SMBG9.0-E3/55 数据手册

与SMBG9.0-E3/55相关器件

与SMBG9.0-E3/55相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBG9.0-E3/55

SMBG9.0-E3/55 数据手册

与SMBG9.0-E3/55相关器件

与SMBG9.0-E3/55相关文章

您还可以找

您在本页遇到什么问题？