Datasheet > SMBG8.0A-M3/5B

SMBG8.0A-M3/5B

更新时间： 2024-10-29 22:57:15

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	91K
描述
TVS DIODE 8V 13.6V DO215AA

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中文翻译

获取价格

数据手册

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SMBG8.0A-M3/5B 数据手册

SMBG5.0A thru SMBG188CA

www.vishay.com

Vishay General Semiconductor

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a 10/1000 μs

waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

SMBG (DO-215AA)

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

V_WM

5.0 V to 188 V

TYPICAL APPLCIATIONS

_BR(uni-directional)

6.4 V to 231 V

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

_BR(bi-directional)

P_PPM

6.4 V to 231 V

600 W

_FSM(uni-directional only)

100 A

T_Jmax.

150 °C

MECHANICAL DATA

Polarity

Uni-directional, bi-directional

SMBG (DO-215AA)

Case: SMBG (DO-215AA)

Molding compound meets UL 94 V-0 flammability rating

Package

Base P/N-M3

commercial grade

- halogen-free, RoHS-compliant, and



DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g. SMBG10CA).

Electrical characteristics apply in both directions.

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

M3 suffix meets JESD 201 class 2 whisker test

Polarity: for uni-directional types the band denotes cathode

end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

600

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) ⁽¹⁾⁽²⁾

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

Peak forward surge current 8.3 ms single half sine-wave ⁽²⁾

Operating junction and storage temperature range

I_PPM

See next table

I_FSM

T_J, T_STG

-65 to +175

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 16-Jan-18

Document Number: 89421

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与SMBG8.0A-M3/5B相关器件

型号	品牌	获取价格	描述	数据表
SMBG8.0A-TP	MCC	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-215AA, SMBG, 2 PIN
SMBG8.0ATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 8V V(RWM), Unidirectional,
SMBG8.0C/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG8.0C/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG8.0C/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG8.0C/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG8.0CA/52-E3	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC, SMBG, 2 PIN, Transient
SMBG8.0CA/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG8.0CA/5B-E3	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC, SMBG, 2 PIN, Transient
SMBG8.0CA/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-215

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