Datasheet > SMBG8.0C-HE3/52

SMBG8.0C-HE3/52

更新时间： 2024-10-30 10:39:39

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
6页	97K
描述
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN

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中文翻译

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数据手册

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SMBG8.0C-HE3/52 数据手册

SMBG5.0 thru SMBG188CA

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in Unidirectional and Bidirectional

• 600 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty cycle):

0.01 %

• Excellent clamping capability

DO-215AA (SMBG)

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020C, LF max peak

of 260 °C

• Solder Dip 260 °C, 40 seconds

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

MAJOR RATINGS AND CHARACTERISTICS

TYPICAL APPLICATIONS

V_WM

P_PPM

5.0 V to 188 V

600 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

_FSM(Unidirectional only)

T_jmax.

100 A

150 °C

DEVICES FOR BIDIRECTION APPLICATIONS

For bidirectional devices use C or CA suffix

(e.g. SMBG10CA).

MECHANICAL DATA

Case: DO-215AA (SMBG)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

Electrical characteristics apply in both directions.

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: For unidirectional types the band denotes

cathode end, no marking on bidirectional types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

Minimum 600

see next table

100

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ^(1,2)(see Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

I_PPM

I_FSM

T_J, T_STG

- 55 to + 150

°C

Note:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number 88456

08-Sep-06

www.vishay.com

12 3 4 5 6

中文翻译

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与SMBG8.0C-HE3/52相关器件

型号	品牌	获取价格	描述	数据表
SMBG8.0CHE3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG8.0C-TP	MCC	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-215AA, SMBG, 2 PIN
SMBG8.0CTR	MICROSEMI	获取价格	暂无描述
SMBG8.0CTRE3	MICROSEMI	获取价格	暂无描述
SMBG8.0E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBG8.0HE3/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBG8.0-HE3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMBG8.0P	MCC	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, SMBG, 2 PIN, Transient Suppress
SMBG8.0-TP	MCC	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-215AA, SMBG, 2 PIN
SMBG8.0TR	MICROSEMI	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC PACKAGE-2

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