是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DO-215AA | 包装说明: | R-PDSO-G2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.71 | Is Samacsys: | N |
其他特性: | UL RECOGNIZED | 最大击穿电压: | 86.9 V |
最小击穿电压: | 71.1 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-215AA | JESD-30 代码: | R-PDSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
最大非重复峰值反向功率耗散: | 600 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性: | BIDIRECTIONAL |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 64 V |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMBG64CE3/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 64V V(RWM), Bidirectional, 1 Element, Silicon, DO-21 | |
SMBG64CE3/TR7 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 64V V(RWM), Bidirectional, 1 Element, Silicon, DO-21 | |
SMBG64CE3TR | MICROSEMI |
获取价格 |
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC PACKAGE-2 | |
SMBG64CTRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 64V V(RWM), Bidirectional, | |
SMBG64-E3 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 64V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
SMBG64HE3/52 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 64V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
SMBG64HE3/5B | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 64V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
SMBG64TR | MICROSEMI |
获取价格 |
600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC PACKAGE-2 | |
SMBG65 | MICROSEMI |
获取价格 |
UNI- AMD BI-DIRECTIONAL SURFACE MOUNT | |
SMBG65A | MICROSEMI |
获取价格 |
UNI- AMD BI-DIRECTIONAL SURFACE MOUNT |