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SMBG45CAHE3/5B PDF预览

SMBG45CAHE3/5B

更新时间: 2024-11-05 22:48:31
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
5页 93K
描述
TVS DIODE 45V 72.7V DO215AA

SMBG45CAHE3/5B 数据手册

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SMBG5.0A thru SMBG188CA  
www.vishay.com  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate  
(duty cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
SMBG (DO-215AA)  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
VWM  
5.0 V to 188 V  
V
BR (uni-directional)  
6.4 V to 231 V  
6.4 V to 231 V  
600 W  
TYPICAL APPLICATIONS  
V
BR (bi-directional)  
PPPM  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
I
FSM (uni-directional only)  
100 A  
TJ max.  
150 °C  
Polarity  
Uni-directional, bi-directional  
SMBG (DO-215AA)  
MECHANICAL DATA  
Case: SMBG (DO-215AA)  
Package  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3  
-
RoHS-compliant, industrial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. SMBG10CA).  
Electrical characteristics apply in both directions.  
meets JESD 201 class 2 whisker test  
Polarity: for uni-directional types the band denotes cathode  
end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
IPPM  
See next table  
100  
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
IFSM  
A
TJ, TSTG  
-55 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 16-Jan-18  
Document Number: 88456  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

SMBG45CAHE3/5B 替代型号

型号 品牌 替代类型 描述 数据表
SMBG45CA-M3/5B VISHAY

完全替代

TVS DIODE 45V 72.7V DO215AA
SMBG45CA-E3/52 VISHAY

完全替代

DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2

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