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SMBG45HE3/52 PDF预览

SMBG45HE3/52

更新时间： 2024-11-05 19:44:35
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 97K
描述
Trans Voltage Suppressor Diode, 45V V(RWM), Unidirectional,

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SMBG45HE3/52 技术参数

是否Rohs认证：符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.83
Is Samacsys：N击穿电压标称值：55.55 V
最大钳位电压：80.3 V二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
极性：UNIDIRECTIONAL参考标准：AEC-Q101
最大重复峰值反向电压：45 V子类别：Transient Suppressors
表面贴装：YESBase Number Matches：1

SMBG45HE3/52 数据手册

 浏览型号SMBG45HE3/52的Datasheet PDF文件第2页浏览型号SMBG45HE3/52的Datasheet PDF文件第3页浏览型号SMBG45HE3/52的Datasheet PDF文件第4页浏览型号SMBG45HE3/52的Datasheet PDF文件第5页 
SMBG5.0A thru SMBG188CA  
www.vishay.com  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate  
(duty cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
DO-215AA (SMBG)  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
VWM  
5.0 V to 188 V  
V
BR (uni-directional)  
6.4 V to 231 V  
6.4 V to 231 V  
600 W  
TYPICAL APPLICATIONS  
V
BR (bi-directional)  
PPPM  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
I
FSM (uni-directional only)  
100 A  
TJ max.  
150 °C  
Polarity  
Uni-directional, bi-directional  
DO-215AA (SMBG)  
MECHANICAL DATA  
Case: DO-215AA (SMBG)  
Package  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. SMBG10CA).  
Electrical characteristics apply in both directions.  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
IPPM  
See next table  
100  
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
IFSM  
A
TJ, TSTG  
- 55 to + 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 12-Nov-12  
Document Number: 88456  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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