SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
®
High Power Density Surface-Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Available in unidirectional and bidirectional
• Excellent clamping capability
• Very fast response time
Available
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMB (DO-214AA)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
D
3D Models
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
VBR (unidirectional)
6.4 V to 49.1 V
V
BR (bidirectional)
6.4 V to 49.1 V
5.0 V to 40 V
1000 W
VWM
MECHANICAL DATA
PPPM (unidirectional)
PPM (bidirectional)
Case: SMB (DO-214AA)
P
800 W
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
IFSM (uni-directional only)
100 A
TJ max.
150 °C
Polarity
Unidirectional, bidirectional
SMB (DO-214AA)
Package
(“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: for unidirectional types the color band denotes
cathode end, no marking on bidirectional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
1000
UNIT
unidirectional
Peak pulse power dissipation with a 10/1000 μs waveform
(fig. 1)
(1)(2)
PPPM
W
bidirectional
800
(1)
Peak pulse current with a 10/1000 μs waveform
IPPM
See next table
100
A
A
(2)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
IFSM
TJ, TSTG
-55 to +150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Revision: 20-Jul-2020
Document Number: 88422
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000