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SMB8J11C-E3/52 PDF预览

SMB8J11C-E3/52

更新时间： 2024-11-13 20:40:23
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 97K
描述
Trans Voltage Suppressor Diode, 11V V(RWM), Bidirectional,

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SMB8J11C-E3/52 技术参数

是否Rohs认证：符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.84
Is Samacsys：N击穿电压标称值：13.55 V
最大钳位电压：20.1 V二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
极性：BIDIRECTIONAL最大重复峰值反向电压：11 V
子类别：Transient Suppressors表面贴装：YES
Base Number Matches：1

SMB8J11C-E3/52 数据手册

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SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A  
www.vishay.com  
Vishay General Semiconductor  
®
High Power Density Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DO-214AA (SMB)  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
VBR (uni-directional)  
6.4 V to 49.1 V  
V
BR (bi-directional)  
VWM  
6.4 V to 49.1 V  
5.0 V to 40 V  
1000 W  
MECHANICAL DATA  
Case: DO-214AA (SMBJ)  
Molding compound meets UL 94 V-0 flammability rating  
P
PPM (uni-directional)  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
PPPM (bi-directional)  
800 W  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
PD  
100 W  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
I
FSM (uni-directional only)  
100 A  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
TJ max.  
150 °C  
Polarity  
Uni-directional, bi-directional  
DO-214AA (SMBJ)  
Polarity: For uni-directional types the color band denotes  
cathode end, no marking on bi-directional types  
Package  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
1000  
UNIT  
uni-directional  
Peak pulse power dissipation  
PPPM  
W
with a 10/1000 μs waveform (1)(2) (fig. 1)  
bi-directional  
800  
Peak pulse current with a 10/1000 μs waveform (1)  
IPPM  
PD  
See next table  
100  
A
W
°C  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to 150  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 12-Nov-12  
Document Number: 88422  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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SMB8J11C-E3/52 替代型号

型号 品牌 替代类型 描述 数据表
SMB8J11CA-E3/52 VISHAY

完全替代

 TVS DIODE 11V 18.2V DO214AA

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