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SMB12C PDF预览

SMB12C

更新时间: 2024-11-11 04:03:55
品牌 Logo 应用领域
台湾光宝 - LITEON /
页数 文件大小 规格书
4页 37K
描述
SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS

SMB12C 技术参数

生命周期:Obsolete包装说明:R-PDSO-C2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.84最大击穿电压:13.2 V
最小击穿电压:10.8 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-C2最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:BIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
最大重复峰值反向电压:9.72 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

SMB12C 数据手册

 浏览型号SMB12C的Datasheet PDF文件第2页浏览型号SMB12C的Datasheet PDF文件第3页浏览型号SMB12C的Datasheet PDF文件第4页 
POWER  
SEMICONDUCTOR  
SMB SERIES  
LITE ON  
SURFACE MOUNT  
UNIDIRECTIONAL AND BIDIRECTIONAL  
TRANSIENT VOLTAGE SUPPRESSORS  
6.8 200  
to  
STAND-OFF VOLTAGE -  
POWER DISSIPATION -  
Volts  
600  
WATTS  
FEATURES  
Rating to 200V VBR  
SMB  
For surface mounted applications  
Reliable low cost construction utilizing molded plastic  
technique  
SMB  
MIN.  
4.06  
3.30  
1.96  
0.15  
5.21  
0.05  
2.01  
0.76  
Plastic material has UL flammability classification  
94V-O  
DIM.  
MAX.  
4.57  
3.94  
2.21  
0.31  
5.59  
0.20  
2.62  
1.52  
A
A
B
C
D
E
F
Typical IR less than 1uA above 10V  
B
Fast response time: typically less than 1.0ps for  
Uni-direction,less than 5.0ns for Bi-direction,form 0  
Volts to BV min  
C
G
G
H
D
MECHANICAL DATA  
Case : Molded plastic  
H
F
E
All Dimensions in millimeter  
Polarity : by cathode band denotes uni-directional  
device none cathode band denotes bi-directional device  
Weight : 0.003 ounces, 0.093 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
CHARACTERISTICS  
SYMBOLS  
VALUE  
UNIT  
A
PEAK POWER DISSIPATION AT T = 25 C,  
= 1ms (Note 1,2)  
Minimum 600  
PK  
WATTS  
AMPS.  
P
T
P
Peak Forward Surge Current 8.3ms  
single half sine-wave super imposed  
on rated load (Note 3)  
FSM  
I
100  
5.0  
(JEDEC METHOD)  
Steady State Power Dissipation at T =75 C  
L
M(AV)  
P
WATTS  
Volts  
Maximum Instantaneous forward voltage  
at 50A for unidirectional devices only (Note 3)  
F
V
SEE NOTE 4  
J
T
-55 to +150  
-55 to +175  
C
Operating Temperature Range  
Storage Temperature Range  
C
STG  
T
A
NOTES : 1. Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig.1.  
REV. 1, 24-May-2000  
2. Thermal Resistance junction to Lead  
3. 8.3ms single half-sine wave duty cycle= 4 pulses maximum per minute (unidirectional units only).  
F
F
4. V = 3.5V on SMB6.8 thru SMB90A devices and V = 5.0V on SMB100 thru SMB200A devices.  

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