POWER
SEMICONDUCTOR
SMB SERIES
LITE ON
SURFACE MOUNT
UNIDIRECTIONAL AND BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
6.8 200
to
STAND-OFF VOLTAGE -
POWER DISSIPATION -
Volts
600
WATTS
FEATURES
Rating to 200V VBR
SMB
For surface mounted applications
Reliable low cost construction utilizing molded plastic
technique
SMB
MIN.
4.06
3.30
1.96
0.15
5.21
0.05
2.01
0.76
Plastic material has UL flammability classification
94V-O
DIM.
MAX.
4.57
3.94
2.21
0.31
5.59
0.20
2.62
1.52
A
A
B
C
D
E
F
Typical IR less than 1uA above 10V
B
Fast response time: typically less than 1.0ps for
Uni-direction,less than 5.0ns for Bi-direction,form 0
Volts to BV min
C
G
G
H
D
MECHANICAL DATA
Case : Molded plastic
H
F
E
All Dimensions in millimeter
Polarity : by cathode band denotes uni-directional
device none cathode band denotes bi-directional device
Weight : 0.003 ounces, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOLS
VALUE
UNIT
A
PEAK POWER DISSIPATION AT T = 25 C,
= 1ms (Note 1,2)
Minimum 600
PK
WATTS
AMPS.
P
T
P
Peak Forward Surge Current 8.3ms
single half sine-wave super imposed
on rated load (Note 3)
FSM
I
100
5.0
(JEDEC METHOD)
Steady State Power Dissipation at T =75 C
L
M(AV)
P
WATTS
Volts
Maximum Instantaneous forward voltage
at 50A for unidirectional devices only (Note 3)
F
V
SEE NOTE 4
J
T
-55 to +150
-55 to +175
C
Operating Temperature Range
Storage Temperature Range
C
STG
T
A
NOTES : 1. Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig.1.
REV. 1, 24-May-2000
2. Thermal Resistance junction to Lead
3. 8.3ms single half-sine wave duty cycle= 4 pulses maximum per minute (unidirectional units only).
F
F
4. V = 3.5V on SMB6.8 thru SMB90A devices and V = 5.0V on SMB100 thru SMB200A devices.