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SMAJ530/51 PDF预览

SMAJ530/51

更新时间： 2023-02-15 00:00:00
品牌 Logo 应用领域
威世 - VISHAY 二极管瞬态抑制器
页数 文件大小 规格书
2页 28K
描述
Trans Voltage Suppressor Diode, 477V V(RWM), Unidirectional,

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中文翻译

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SMAJ530/51 技术参数

是否Rohs认证：不符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.91
Is Samacsys：N最大钳位电压：760 V
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码：e0
极性：UNIDIRECTIONAL最大重复峰值反向电压：477 V
子类别：Transient Suppressors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

SMAJ530/51 数据手册

 浏览型号SMAJ530/51的Datasheet PDF文件第2页 
SMAJ530 and SMAJ550  
Vishay Semiconductors  
formerly General Semiconductor  
Surface Mount TRANSZORB®  
Transient Voltage Suppressors  
Steady State Power 1W  
Peak Pulse Power 300W  
Reverse Voltage 530,550V  
DO-214AC  
(SMA)  
Cathode Band  
0.065 (1.65)  
0.049 (1.25)  
0.110 (2.79)  
0.100 (2.54)  
Mounting Pad Layout  
0.060 MIN  
(1.52 MIN)  
0.094 MAX  
(2.38 MAX)  
0.177 (4.50)  
0.157 (3.99)  
Dimensions in inches  
and (millimeters)  
0.012 (0.305)  
0.006 (0.152)  
0.050 MIN  
(1.27 MIN)  
0.090 (2.29)  
0.078 (1.98)  
0.220 REF  
(5.58)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.203)  
MAX.  
Mechanical Data  
Case: JEDEC DO-214AC molded plastic body over  
passivated chip  
Terminals: Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity: The band denotes the cathode, which is positive with  
respect to the anode under normal TVS operation  
0.208 (5.28)  
0.194 (4.93)  
Features  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
• Protects power IC controllers such as TOPSwitch®  
• Glass passivated junction  
Mounting Position: Any Weight: 0.002 oz., 0.064 g  
• High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
• Excellent clamping capability  
• Available in unidirectional only  
Packaging Codes – Options (Antistatic):  
51 – 1K per Bulk box, 20K/carton  
61 – 1.8K per 7" plastic Reel (12mm tape), 36K/carton  
5A – 7.5K per 13" plastic Reel (12mm tape), 75K/carton  
Maximum Ratings and Thermal Characteristics TA = 25OC unless otherwise noted.  
Parameter  
Symbol  
SMAJ530  
SMAJ550  
Unit  
Device marking code  
HD  
SB  
Steady state power dissipation(3)  
Peak pulse power dissipation(1)(2)(5) (Fig. 1)  
Stand-off voltage  
PM(AV)  
PPPM  
VWM  
1.0  
W
W
Minimum 300  
477  
495  
V
Typical thermal resistance junction-to-lead  
Typical thermal resistance junction-to-ambient  
Operating junction and storage temperature range  
RθJL  
27  
75  
°C/W  
°C/W  
°C  
RθJA  
TJ, TSTG  
–55 to +150  
Electrical Characteristics TA = 25OC unless otherwise noted.  
Minimum breakdown voltage at 100µA  
V(BR)  
530  
550  
V
V
Max. clamping voltage at 400mA, 10/1000µs-waveform  
Maximum DC reverse leakage current at VWM  
Typical temperature coefficient of V(BR)  
Vc  
760  
1.0  
ID  
µA  
650  
mV°C  
Typical capacitance(4)  
at 0V  
at 200V  
90  
7.5  
CJ  
pF  
Notes: (1) Non repetitive current pulse per Fig.3 and derated above 25OC per Fig. 2  
(2) Mounted on 5.0mm2 copper pads to each terminal  
(3) Lead temperature at 75OC = TL  
(4) Measured at 1MHZ  
(5) Peak pulse power waveform is 10/1000µs.  
Document Number 88391  
03-Mar-03  
www.vishay.com  
1
12

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