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SMAJ530-HE3/61 PDF预览

SMAJ530-HE3/61

更新时间: 2024-01-13 06:23:10
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
4页 88K
描述
Trans Voltage Suppressor Diode, 300W, 477V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

SMAJ530-HE3/61 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.51
其他特性:EXCELLENT CLAMPING CAPABILITY ,HIGH RELIABILITY最小击穿电压:530 V
最大钳位电压:760 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:300 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:2.5 W认证状态:Not Qualified
最大重复峰值反向电压:477 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

SMAJ530-HE3/61 数据手册

 浏览型号SMAJ530-HE3/61的Datasheet PDF文件第2页浏览型号SMAJ530-HE3/61的Datasheet PDF文件第3页浏览型号SMAJ530-HE3/61的Datasheet PDF文件第4页 
SMAJ530 & SMAJ550  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available in uni-directional polarity only  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
DO-214AC (SMA)  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PRIMARY CHARACTERISTICS  
VBR  
PPPM  
PD  
530 V, 550 V  
APPLICATION NOTES  
300 W  
2.5 W  
40 A  
• Respect thermal resistance (PCB Layout) - as the  
temperature coefficient also contributes to the  
clamping voltage  
IFSM  
TJ max.  
150 °C  
• Select minimum breakdown voltage, so you get  
acceptable power dissipation and PCB tie point  
temperature  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
• Devices with higher breakdown voltage will have a  
shorter conduction time and will dissipate less  
power  
• Clamping voltage is influenced by internal resistance  
- design approximation is 7 V per 100 mA slope  
®
• Keep temperature of TVS lower than TOPSwitch  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability  
rating  
as a recommendation  
• Maximum current is determined by the maximum  
T and can be higher than 300 mA  
J
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC Q101 qualified)  
• Contact supplier for different clamping voltage/  
current arrangements  
• Minimum breakdown voltage can be customized for  
other applications. Contact supplier  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
• TOPSwitch is a registered trademark of Power  
Integrations, Inc.  
E3 suffix meets JESD 201 class 1A whisker test, HE3  
suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SMAJ530  
SMAJ550  
UNIT  
Device marking code  
HD  
SB  
Power dissipation on infinite heatsink (3)  
Peak pulse power dissipation (1)(2)(4) (Fig. 1)  
Stand-off voltage  
PD  
PPPM  
2.5  
W
W
V
300  
VWM  
477  
495  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Notes:  
(1) Non repetitive current pulse per Fig. 3 and derated above 25 °C per Fig. 2  
(2) Mounted on 5.0 mm2 copper pads to each terminal  
(3) Lead temperature at TL = 75 °C  
(4) Peak pulse power waveform is 10/1000 µs  
Document Number: 88391  
Revision: 21-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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