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SMAJ530HE3_A/I PDF预览

SMAJ530HE3_A/I

更新时间: 2024-11-02 20:49:19
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 86K
描述
Trans Voltage Suppressor Diode, 477V V(RWM), Unidirectional,

SMAJ530HE3_A/I 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.5击穿电压标称值:530 V
最大钳位电压:760 V二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码:e3湿度敏感等级:1
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大重复峰值反向电压:477 V子类别:Transient Suppressors
表面贴装:YES端子面层:Matte Tin (Sn)
处于峰值回流温度下的最长时间:30Base Number Matches:1

SMAJ530HE3_A/I 数据手册

 浏览型号SMAJ530HE3_A/I的Datasheet PDF文件第2页浏览型号SMAJ530HE3_A/I的Datasheet PDF文件第3页浏览型号SMAJ530HE3_A/I的Datasheet PDF文件第4页 
SMAJ530, SMAJ550  
Vishay General Semiconductor  
www.vishay.com  
®
Surface Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available in uni-directional polarity only  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DO-214AC (SMA)  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
VBR (uni-directional)  
530 V to 550 V  
VWM  
477 V, 495 V  
300 W  
MECHANICAL DATA  
PPPM  
Case: DO-214AC (SMA)  
PD  
IFSM (uni-directional only)  
TJ max.  
2.5 W  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant and commercial grade  
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
40 A  
150 °C  
Polarity  
Uni-directional  
DO-214AC (SMA)  
Package  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
APPLICATION NOTES  
• Respect thermal resistance (PCB Layout) - as the  
temperature coefficient also contributes to the clamping  
voltage  
Polarity: Color band denotes cathode end  
• Select minimum breakdown voltage, so you get  
acceptable power dissipation and PCB tie point  
temperature  
• Devices with higher breakdown voltage will have a shorter  
conduction time and will dissipate less power  
• Clamping voltage is influenced by internal resistance -  
design approximation is 7 V per 100 mA slope  
• Keep temperature of TVS lower than TOPSwitch® as a  
recommendation  
• Maximum current is determined by the maximum TJ and  
can be higher than 300 mA  
• Contact supplier for different clamping voltage/  
current arrangements  
• Minimum breakdown voltage can be customized for other  
applications. Contact supplier  
• TOPSwitch is  
Integrations, Inc.  
a
registered trademark of Power  
Revision: 10-Dec-13  
Document Number: 88391  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

SMAJ530HE3_A/I 替代型号

型号 品牌 替代类型 描述 数据表
SMAJ530HE3_ALL VISHAY

完全替代

TVS DIODE 477V 760V DO214AC
SMAJ530-E3/61 VISHAY

完全替代

Surface Mount TRANSZORB® Transient Voltage S

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