Datasheet > SM6S28A

SM6S28A

更新时间： 2024-11-09 18:06:43

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
3页	2127K
描述
DO-218AB

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中文翻译

获取价格

数据手册

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SM6S28A 数据手册

SM6S10(C)A THRU SM6S43(C)A

Surface Mount T

ransient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

FEATURES

• Chip produced by chemical method

• Junction passivated by high temperature resistant

insulating adhesive

• T_J= 175 °C capability suitable for high reliability and

automotive requirement

• Available in Bi-directional polarity only

• Low leakage current

DO-218AB

• Low forward voltage drop

• High surge capability

• Meets ISO16750-2 surge specification (varied by

test condition)

• LF maximum peak of 245 °C

PRIMARY CHARACTERISTICS

V_BR

11.1 V to 52.8 V

10 V to 43 V

4600 W

TYPICAL APPLICATIONS

V_WM

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting,

especially for automotive load dump protection application.

P_PPM(10 x 1000 μs)

_PPM(10 x 10 000 μs)

P_D

3600 W

6 W

T_Jmax.

175 °C

MECHANICAL DATA

Polarity

Bi-directional

Unﬁ-dﬁrectﬁonal/

Case: DO-218AB

Package

DO-218AB

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“X” denotes revision code e.g. A, B, ...)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Polarity: heatsink is anode

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

Peak pulse power dissipation

SYMBOL

VALUE

UNIT

with 10/1000 μs waveform

with 10/10 000 μs waveform

4600

3600

P_PPM

Power dissipation on infinite heatsink at T_C= 25 °C (fig. 1)

Peak pulse current with 10/1000 μs waveform

P_D

6.0

(1)

I_PPM

See next table

-55 to +175

Operating junction and storage temperature range

T_J, T_STG

°C

Note

(1)

Non-repetitive current pulse derated above T_A= 25 °C

http://www.anbonsemi.com

TEL:+86-755-23776891

FAX:+86-755-81482182

Document ID

AS-3080017

Issued Date

2018/03/08

Revised Date

2023/05/12

Revision

Page.

Page 1

12 3

中文翻译

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