Datasheet > SM5S43ATHE3/I

SM5S43ATHE3/I

更新时间： 2024-11-09 22:58:47

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	95K
描述
TVS DIODE 43V 69.4V DO218AC

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数据手册

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SM5S43ATHE3/I 数据手册

SM5S10AT thru SM5S43AT

Vishay General Semiconductor

www.vishay.com

Surface Mount PAR^®Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

FEATURES

• Junction passivation optimized design passivated

anisotropic rectifier technology

• T_J= 175 °C capability suitable for high reliability

and automotive requirement

• Available in uni-directional polarity only

• Low leakage current

• Low forward voltage drop

• High surge capability

• Meets ISO7637-2 surge specification (varied by test

condition)

DO-218 Compatible

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 245 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

V_WM

10 V to 43 V

TYPICAL APPLICATIONS

V_BR

11.1 V to 52.8 V

3600 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting,

especially for automotive load dump protection application.

_PPM(10 x 1000 μs)

_PPM(10 x 10 000 μs)

2800 W

P_D

5 W

I_FSM

500 A

MECHANICAL DATA

Case: DO-218AC

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

T_Jmax.

Polarity

175 °C

Uni-directional

Package

DO-218AC

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 suffix meets JESD 201 class 2 whisker test

Polarity: Heatsink is anode

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

with 10/1000 μs waveform

Peak pulse power dissipation

3600

P_PPM

P_D

with 10/10 000 μs waveform

2800

5.0

Power dissipation on infinite heatsink at T_C= 25 °C (fig. 1)

Peak pulse current with 10/1000 μs waveform

(1)

I_PPM

See next table

Peak forward surge current 8.3 ms single half sine-wave

Operating junction and storage temperature range

I_FSM

500

T_J, T_STG

-55 to +175

°C

Note

(1)

Non-repetitive current pulse at T_A= 25 °C

Revision: 03-Dec-2018

Document Number: 87609

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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