SM5S10(C)A-Q1 THRU SM5S43(C)A-Q1
Surface Mount T
ransient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Chip produced by chemical method
• Junction passivated by high temperature resistant
insulating adhesive
• TJ = 175 °C capability suitable for high reliability and
automotive requirement
• Available in Bi-directional polarity only
• Low leakage current
DO-218AB
• Low forward voltage drop
• High surge capability
• Meets ISO16750-2 surge specification (varied by
test condition)
• LF maximum peak of 245 °C
• AEC-Q101 qualified
PRIMARY CHARACTERISTICS
VBR
11.1 V to 52.8 V
10 V to 43 V
3600 W
TYPICAL APPLICATIONS
VWM
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
PPPM (10 x 1000 μs)
P
PPM (10 x 10 000 μs)
PD
2800 W
5 W
TJ max.
175 °C
MECHANICAL DATA
Polarity
Bi-directional
Unfi-dfirectfional/
Case: DO-218AB
Package
DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Polarity: heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
SYMBOL
VALUE
UNIT
with 10/1000 μs waveform
with 10/10 000 μs waveform
3600
2800
PPPM
W
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
PD
5.0
W
A
(1)
IPPM
See next table
-55 to +175
Operating junction and storage temperature range
TJ, TSTG
°C
Note
(1)
Non-repetitive current pulse derated above TA = 25 °C
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Document ID
AS-1080029
Issued Date
2018/03/08
Revised Date
2023/05/12
Revision
Page.
3
C
Page 1