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SM2404T-6 PDF预览

SM2404T-6

更新时间: 2024-01-17 00:00:45
品牌 Logo 应用领域
铁电 - RAMTRON 时钟动态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 90K
描述
Cache DRAM, 1MX16, 4.3ns, CMOS, PDSO50, TSOP2-50

SM2404T-6 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP, TSOP50,.46,32针数:50
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.83
访问模式:DUAL BANK PAGE BURST最长访问时间:4.3 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):166 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:R-PDSO-G50JESD-609代码:e0
内存密度:16777216 bit内存集成电路类型:CACHE DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:50
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP封装等效代码:TSOP50,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5/3.3,3.3 V
认证状态:Not Qualified刷新周期:2048
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.002 A子类别:Other Memory ICs
最大压摆率:0.28 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SM2404T-6 数据手册

 浏览型号SM2404T-6的Datasheet PDF文件第3页浏览型号SM2404T-6的Datasheet PDF文件第4页浏览型号SM2404T-6的Datasheet PDF文件第5页浏览型号SM2404T-6的Datasheet PDF文件第7页浏览型号SM2404T-6的Datasheet PDF文件第8页浏览型号SM2404T-6的Datasheet PDF文件第9页 
16Mbit ESDRAM Family  
Clock Frequency  
The following table specifies the operation of the ESDRAM at clock rates ranging from 66MHz to 166MHz. Clock rates  
up to 133MHz assume the use of LVTTL I/O levels. Clock rates from 133MHz to 166MHz assume the use of 2.5V I/O  
levels.  
ESDRAM input setup time is 2ns at 133MHz. ESDRAM clock to output delay is 4.5ns at 133MHz. These improved I/O  
specifications allow ESDRAM to operate in real systems at the specified clock rate.  
AC Parameters  
-6  
-7.5  
-10  
Symbol  
Parameter  
Min  
Max  
Min  
Max  
Min  
Max  
Units  
Clock and Clock Enable Parameters  
tCK2  
Clock Cycle Time, CL = 2, 3  
Clock Cycle Time, CL = 1  
Clock Access Time, CL = 2, 3  
Clock Access Time, CL = 1  
Clock High Time (CL=2,3)  
Clock High Time (CL=1)  
6
12  
-
7.5  
15  
-
10  
20  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
166MHz  
133MHz  
100MHz  
tCK1  
83MHz  
66MHz  
50MHz  
tAC2  
4.3  
4.5  
5
15  
-
tAC1  
-
10.5  
-
12  
-
-
tCKH2  
tCKH1  
tCKL2  
tCKL1  
tCKES  
tCKEH  
tCKSP  
tT  
2.4  
5
-
-
2.8  
6
3.5  
7
-
-
Clock Low Time (CL=2,3)  
Clock Low Time (CL=1)  
2.4  
5
-
2.8  
6
-
3.5  
7
-
-
-
-
Clock Enable Set-Up Time  
Clock Enable Hold Time  
2.0  
1.0  
2.0  
-
-
2.0  
1.0  
2.0  
-
-
2.5  
1.0  
2.5  
-
-
-
-
-
CKE Set-Up Time (Power down mode)  
Transition Time (Rise and Fall)  
-
-
-
3
4
4
Common Parameters  
tCS  
Command and Address Set-Up Time  
2.0  
1.0  
12  
36  
18  
14  
12  
6
-
2.0  
1.0  
15  
-
2.5  
1.0  
20  
50  
30  
20  
20  
10  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tCH  
Command and Address Hold Time  
RAS to CAS Delay Time  
Bank Cycle Time  
-
-
-
tRCD  
tRC  
tRAS  
tRP  
tRRD  
tCCD  
-
-
-
120K  
37.5  
22.5  
15  
120K  
120K  
Bank Active Time  
120K  
120K  
120K  
Precharge Time  
-
-
-
-
-
-
-
-
-
Bank to Bank Delay Time (Alt. Bank)  
CAS to CAS Delay Time (Same Bank)  
15  
7.5  
Read and Write Parameters  
tOH2  
tOH1  
tLZ  
Data Output Hold Time (CL=2,3)  
2
3
-
2
3
-
2
3
-
ns  
ns  
Data Output Hold Time (CL=1)  
Data Output to Low-Z Time  
Data Output to High-Z Time (CL=2,3)  
Data Output to High-Z Time (CL=1)  
DQM Data Output Disable Time  
Data Input Set-Up Time  
-
-
-
0
-
0
-
0
-
ns  
tHZ2  
tHZ1  
tDQZ  
tDS  
-
4.3  
-
4.5  
-
5.0  
ns  
-
7.0  
-
7.5  
-
8.0  
ns  
2
-
-
-
-
-
-
2
-
-
-
-
-
-
2
-
-
-
-
-
-
CLK  
ns  
2.0  
1.0  
8
2.0  
1.0  
9
2.5  
1.0  
10  
30  
0
tDH  
Data Input Hold Time  
ns  
tDPL  
tDAL  
tDQW  
Data Input to Precharge  
ns  
Data Input to ACTV/Refresh  
Data Write Mask Latency  
22  
0
24  
0
ns  
CLK  
Refresh Parameters  
tREF  
Refresh Period (2048 cycles)  
-
64  
-
-
64  
-
-
64  
-
ms  
ns  
2CLK  
+tRC  
2CLK  
+tRC  
2CLK  
+tRC  
tSREX  
Self Refresh Exit Time  
Rev. 2.2  
6

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