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SM120AF PDF预览

SM120AF

更新时间: 2024-11-12 12:46:59
品牌 Logo 应用领域
SECOS 二极管光电二极管瞄准线
页数 文件大小 规格书
2页 236K
描述
20V ~200V 1.0 Amp Surfacemount Schottky Barrier Rectifiers

SM120AF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:ROHS COMPLIANT, PLASTIC, SMAF, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.66
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.45 VJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-50 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:20 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SM120AF 数据手册

 浏览型号SM120AF的Datasheet PDF文件第2页 
SM120AF~SM1200AF  
20 V ~ 200 V  
1.0 Amp Surface Mount Schottky Barrier Rectifiers  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen-free and RoHS Compliant  
FEATURES  
Ideal for surface mount applications  
Easy pick and place  
Built-in strain relief  
SMAF  
Low forward voltage drop  
PACKAGING INFORMATION  
Metallurgically bonded construction  
Polarity: Color band denotes cathode end  
Case: Molded plastic  
Epoxy: UL94-V0 rate flame retardant  
Weight: 0.032 grams (approximately)  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
3.95  
2.25  
4.80  
Max.  
4.60  
2.95  
5.60  
Min.  
Max.  
1.50  
1.65  
1.10  
PACKAGE INFORMATION  
A
B
C
D
E
F
0.75  
1.25  
0.90  
Package  
MPQ  
3K  
Leader Size  
SMAF  
7 inch  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, de-rate current by 20%.)  
Part Number  
SM SM  
120AF 140AF 160AF 1100AF 1150AF  
Parameter  
Symbol  
Unit  
SM  
SM  
SM  
SM  
1200AF  
Maximum Recurrent Peak Reverse  
Voltage  
VRRM  
20  
40  
60  
100  
150  
200  
V
Working Peak Reverse Voltage  
Maximum DC Blocking Voltage  
VRMS  
VR  
14  
20  
28  
40  
42  
60  
70  
105  
150  
140  
200  
V
V
100  
Maximum Instantaneous Forward  
Voltage @ 1A  
VF  
IO  
0.45  
0.5  
0.7  
0.85  
0.87  
0.9  
V
A
Maximum Average Forward Rectified  
Current, See Fig.1  
1
Peak Forward Surge Current, 8.3ms  
single half sine-wave superimposed on  
rated load (JEDEC method)  
IFSM  
30  
A
TC=25°C  
0.5  
10  
0.2  
5
Maximum Reverse  
Current 2  
IR  
mA  
TC=100°C  
Typical Thermal Resistance  
Typical Thermal Resistance  
Diode Junction Capacitance (Typ.) 1  
Operating Temperature Range  
Rθ  
120  
90  
JA  
°C / W  
Rθ  
JC  
CJ  
TJ  
90  
70  
60  
-50 ~ 125  
50  
35  
-50~150  
pF  
°C  
°C  
Storage Temperature Range  
TSTG  
-50~150  
Note:  
1. f=1MHz and applied 4V DC reverse voltage  
2. Pulse TestPulse Width = 300 µs, Duty Cycle 2.0%.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
07-Feb-2013 Rev. A  
Page 1 of 2  

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