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SM120MH_10 PDF预览

SM120MH_10

更新时间: 2024-11-12 09:22:51
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描述
1.0 Amp Surface Mount Schottky Barrier Rectifiers

SM120MH_10 数据手册

 浏览型号SM120MH_10的Datasheet PDF文件第2页 
SM120MH~SM1100MH  
20 ~ 100 V  
1.0 Amp Surface Mount Schottky Barrier Rectifiers  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen-free and RoHS Compliant  
FEATURES  
Batch process design, excellent power dissipation offers.  
better reverse leakage current and thermal resistance.  
Low profile surface mounted application.  
in order to optimize board space.  
SOD-123MH  
Low power loss and low forward voltage drop  
High surge, high current capability, and high efficiency.  
Fast switching for high efficiency.  
Guard-ring for overvoltage protection.  
Ultra high-speed switching  
A
D
B
F
Silicon epitaxial planar chip, metal silicon junction.  
C
PACKAGING INFORMATION  
E
E
Small plastic SMD package.  
Case: Molded plastic  
Millimeter  
Millimeter  
Min. Max.  
3.10 (MAX.)  
0.80 (TYP.)  
0.30 (TYP.)  
REF.  
REF.  
Min.  
Max.  
3.70  
1.90  
1.00  
A
B
C
3.30  
1.50  
0.60  
D
E
F
Epoxy: UL94-V0 rate flame retardant  
  
Weight: 0.0110 g (Approximately)  
Cathode  
  
Anode  
MARKING CODE  
Part Number  
SM120MH  
SM130MH  
SM140MH  
SM150MH  
Marking Code  
Part Number  
SM160MH  
SM180MH  
SM1100MH  
Marking Code  
12  
13  
14  
15  
16  
18  
10  
MAXIMUM RATINGS (T = 25°C unless otherwise specified.)  
a
PART NUMBERS  
SYMBOL  
SM  
120  
MH  
SM  
130  
MH  
SM  
140  
MH  
SM  
150  
MH  
SM  
160  
MH  
SM  
180  
MH  
SM  
1100  
MH  
UNITS  
TESTING CONDITIONS  
PARAMETERS  
Recurrent Peak  
Reverse Voltage (Max.)  
VRRM  
VRMS  
VR  
20  
14  
20  
30  
21  
40  
50  
60  
80  
56  
80  
100  
70  
V
V
V
V
RMS Voltage (Max.)  
28  
40  
35  
50  
42  
60  
Reverse Voltage (Max.)  
Forward Voltage (Max.)  
30  
100  
VF  
0.50  
0.70  
0.85  
Forward  
Rectified Current (Max.)  
IO  
1.0  
See Fig.1  
A
A
8.3ms single half sine-wave  
superimposed on rated load  
(JEDEC method)  
Peak Forward Surge Current  
IFSM  
25  
VR=VRRM, T =25°C  
0.5  
10  
a
Reverse Current (Max.)  
IR  
mA  
°C/W  
pF  
VR=VRRM, T =125°C  
a
Thermal Resistance (Typ.)  
RJA  
CJ  
98  
Junction to ambient  
Diode Junction  
f=1MHz and applied 4V DC  
reverse voltage  
120  
Capacitance (Typ.)  
Storage and Operating  
Temperature Range  
TSTG, TJ  
-65 ~ 175, -55 to 125  
-65 ~ 175, -55 to 150  
°C  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
16-Jul-2010 Rev. B  
Page 1 of 2  

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