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SLV8205L PDF预览

SLV8205L

更新时间: 2024-11-07 18:09:47
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
8页 927K
描述
SOT23-6

SLV8205L 数据手册

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SLV8205L  
16V N -Channel MOSFET  
Features  
General Description  
- N-Channel: 16V 4A  
This Power MOSFET is produced using Msemitek‘s  
RDS(on)Typ=22mΩ@VGS = 4.5 V  
RDS(on))Typ= 34mΩ@VGS = 2.5V  
- Very Low On-resistance RDS(ON)  
- Low Crss  
- Fast switching  
advanced TRENCH technology.  
This advanced technology has been especially tailored to  
minimize conduction loss, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode.  
- Improved dv/dt capability  
Application  
PWM Application  
Load Switch  
Power Management  
Package  
Pin description  
D1  
D2  
6
S1  
D1  
1
2
3
4
5
6
5
S2  
G1  
4
3
G1  
G2  
2
D2  
G2  
1
S1  
S2  
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
Symbol  
Parameter  
SLV8205L  
Units  
Drain-Source Voltage  
16  
4
V
A
VDSS  
Drain Current  
- Continuous (TC = 25)  
- Continuous (TC = 100)  
- Pulsed  
ID  
2.4  
16  
A
(Note 1)  
IDM  
VGSS  
PD  
Drain Current  
A
Gate-Source Voltage  
12  
±
V
Power Dissipation (TC = 25)  
1.25  
100  
W
/W  
R θJA  
TJ, TSTG  
Thermal Resistance, Junction-to-Ambient  
Operating and Storage Temperature Range  
-55 to +150  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
TL  
300  
* Drain current limited by maximum junction temperature.  
Msemitek Co., Ltd  
http://www.msemitek.com  
Rev1.1 May 2023  

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