Datasheet > SLV702T

SLV702T

更新时间： 2024-11-21 18:09:23

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美浦森 - Maplesemi		/
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8页	890K
描述
SOT-23

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数据手册

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SLV702T 数据手册

SLV702T

20V N -Channel MOSFET

Features

General Description

- N-Channel: 20V 9A

This Power MOSFET is produced using Msemitek‘s

R_DS(on)Typ=9.7mΩ@V_GS= 4.5 V

R_DS(on))Typ= 13.4mΩ@V_GS= 2.5V

- Very Low On-resistance R_DS(ON)

- Low Crss

- Fast switching

advanced TRENCH technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- Improved dv/dt capability

Application

 PWM Application

 Load Switch

 Power Management

SOT-23

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLV702T

Units

Drain-Source Voltage

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

5.8

(Note 1)

I_DM

V_GSS

P_D

Drain Current

- Pulsed

Gate-Source Voltage

Power Dissipation (T_C= 25℃)

1.25

100

℃/W

℃

R _θJA

T_J, T_STG

Thermal Resistance, Junction-to-Ambient

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 Oct 2022

12 3 4 5 6 7 8

中文翻译

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