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SLV8205A PDF预览

SLV8205A

更新时间: 2024-11-07 18:09:39
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
8页 544K
描述
SOT23-6

SLV8205A 数据手册

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SLV8205A  
20V N -Channel MOSFET  
Features  
General Description  
- N-Channel:20V 5A  
This Power MOSFET is produced using Msemitek‘s  
RDS(on)Typ= 19mΩ@VGS = 4.5V  
RDS(on)Typ= 22mΩ@VGS = 2.5V  
advanced TRENCH technology.  
This advanced technology has been especially tailored to  
minimize conduction loss, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode.  
- Very Low On-resistance RDS(ON)  
- Low Crss  
- Fast switching  
- 100% avalanche tested  
- Improved dv/dt capability  
Application  
PWM Application  
Load Switch  
Power Management  
Package  
Pin description  
D1  
D2  
6
S1  
D1  
1
2
3
4
5
6
5
S2  
G1  
4
3
G1  
G2  
2
D2  
G2  
1
SOT23-6  
S1  
S2  
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
Symbol  
Parameter  
SLV8205A  
Units  
Drain-Source Voltage  
20  
V
VDSS  
Drain Current  
- Continuous (TC = 25)  
- Continuous (TC = 100)  
- Pulsed  
5
-
A
A
ID  
(Note 1)  
IDM  
VGSS  
PD  
Drain Current  
20  
A
Gate-Source Voltage  
12  
±
V
Power Dissipation (TC = 25)  
1.25  
100  
W
R θJA  
TJ, TSTG  
Thermal Resistance, Junction to Case  
Operating and Storage Temperature Range  
/W  
-55 to +150  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
TL  
300  
* Drain current limited by maximum junction temperature.  
Msemitek Co., Ltd  
http://www.msemitek.com  
Rev1.0 Apr. 2020  

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