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SLM50N06T PDF预览

SLM50N06T

更新时间: 2024-10-31 18:09:31
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
8页 990K
描述
DFN5*6

SLM50N06T 数据手册

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SLM50N06T  
60V N-Channel MOSFET  
General Description  
Features  
- 50A, 60V, RDS(on)Typ = 14.8mΩ@VGS = 10 V  
RDS(on)Typ = 18.2mΩ@VGS = 4.5 V  
- Low gate charge ( typical 27.2nC)  
- High ruggedness  
- Fast switching  
- 100% avalanche tested  
This Power MOSFET is produced using Msemitek‘s  
advanced TRENCH technology.  
This advanced technology has been especially tailored  
to minimize conduction loss, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode.  
- Improved dv/dt capability  
Application  
PWM Application  
Load Switch  
Power Management  
D
D
D
D
D
D
D
D
D
G
DFN5*6  
S
S
S
S
G
G
S
S
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
Symbol  
Parameter  
SLM50N06T  
Units  
V
Drain-Source Voltage  
60  
50  
VDSS  
Drain Current  
- Continuous (TC = 25)  
- Continuous (TC = 100)  
- Pulsed  
A
ID  
33  
A
(Note 1)  
(Note 2)  
IDM  
VGSS  
EAS  
Drain Current  
200  
A
Gate-Source Voltage  
20  
±
V
Single Pulsed Avalanche Energy  
Power Dissipation (TC = 25)  
68  
mJ  
W
PD  
39  
0.31  
R θJC  
TJ, TSTG  
Thermal Resistance, Junction to Case  
Operating and Storage Temperature Range  
/W  
-55 to +150  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
TL  
300  
* Drain current limited by maximum junction temperature.  
Msemitek Co., Ltd  
http://www.msemitek.com  
Rev. 1.4 May. 2023  

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