Datasheet > SLD30L03A

SLD30L03A

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
11页	659K
描述
TO-252-4L

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数据手册

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SLD30L03A 数据手册

SLD30L03A

N And P-Channel Enhancement Mode MOSFET

Features

General Description

- N-Channel: 30V 25A

This Power MOSFET is produced using Msemitek‘s

R_DS(on)Typ= 9mΩ@V_GS= 10 V

R_DS(on))Typ= 13mΩ@V_GS= 4..5V

- P-Channel: -30V- 20A

R_DS(on))Typ= 23mΩ@V_GS= -10 V

R_DS(on))Typ=34.5mΩ@V_GS= -4.5V

- Very Low On-resistance R_DS(ON)

advanced TRENCH technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- Low Crss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

Application

 Battery Protection

 Load Switch

 Power Management

TO-252-4L

N-Channel

P-Channel

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

N-Channel

P-Channel

-30

Units

Drain-Source Voltage

V_DSS

Drain Current

- Continuous (T_C= 25℃)

-20

I_D

- Continuous (T_C= 100℃)

-13

(Note 1)

I_DM

V_GSS

P_D

Drain Current

- Pulsed

120

-60

Gate-Source Voltage

Power Dissipation (T_C= 25℃)

15.5

4.6

R _θJc

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

℃/W

℃

T_J, T_STG

-55 to +150

300

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.1 Oct. 2021

12 3 4 5 6 7...11

中文翻译

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