SLD322V-24

更新时间： 2024-11-29 22:36:07

品牌	Logo	应用领域
索尼 - SONY		光电二极管激光二极管
页数	文件大小	规格书
7页	70K
描述
High Power Density 0.5W Laser Diode

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技术参数
数据手册

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SLD322V-24 技术参数

生命周期：	Active	包装说明：	M-248 (LO-11), 3 PIN
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	配置：	SINGLE WITH BUILT-IN PHOTO DIODE
最大正向电压：	3 V	安装特点：	THROUGH HOLE MOUNT
功能数量：	1	最高工作温度：	30 °C
最低工作温度：	-10 °C	光电设备类型：	LASER DIODE
标称输出功率：	500 mW	峰值波长：	807 nm
形状：	ROUND	尺寸：	3.5 mm
光谱带宽：	3e-9 m	子类别：	Laser Diodes
表面贴装：	NO	最大阈值电流：	300 mA
Base Number Matches：	1

SLD322V-24 数据手册

SLD322V

High Power Density 0.5W Laser Diode

Description

The SLD322V is a high power, gain-guided laser diode produced by MOCVD method . Compared to the

SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

achieved by QW-SCH structure .

MOCVD: Metal Organic Chemical Vapor Deposition

QW-SCH: Quantum Well Separate Confinement Heterostructure

Features

• High power

Recommended optical power output: Po = 0.5W

• Low operating current: Iop = 0.75A (Po = 0.5W)

Applications

• Solid state laser excitation

• Medical use

• Material processes

• Measurement

Structure

GaAlAs quantum well structure laser diode

Absolute Maximum Ratings (Tc = 25°C)

• Optical power output

• Reverse voltage

0.55

VR LD

• Operating temperature (Tc) Topr

–10 to +30

–40 to +85

°C

• Storage temperature

Tstg

Pin Configuration

1. LD cathode

2. PD anode

3. COMMON

Bottom View

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E93205A81-PS

12 3 4 5 6 7

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