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SLD323V PDF预览

SLD323V

更新时间: 2024-11-17 22:50:19
品牌 Logo 应用领域
索尼 - SONY 二极管激光二极管
页数 文件大小 规格书
7页 70K
描述
High Power Density 1W Laser Diode

SLD323V 技术参数

生命周期:Active包装说明:M-248 (LO-11), 3 PIN
Reach Compliance Code:unknown风险等级:5.82
配置:SINGLE WITH BUILT-IN PHOTO DIODE功能数量:1
最高工作温度:30 °C最低工作温度:-10 °C
光电设备类型:LASER DIODE标称输出功率:1000 mW
峰值波长:790 nm形状:ROUND
尺寸:3.5 mm最大阈值电流:500 mA

SLD323V 数据手册

 浏览型号SLD323V的Datasheet PDF文件第2页浏览型号SLD323V的Datasheet PDF文件第3页浏览型号SLD323V的Datasheet PDF文件第4页浏览型号SLD323V的Datasheet PDF文件第5页浏览型号SLD323V的Datasheet PDF文件第6页浏览型号SLD323V的Datasheet PDF文件第7页 
SLD323V  
High Power Density 1W Laser Diode  
Description  
1
The SLD323V is a high power, gain-guided laser diode produced by MOCVD method . Compared to the  
SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be  
2
achieved by QW-SCH structure .  
1
MOCVD: Metal Organic Chemical Vapor Deposition  
2
QW-SCH: Quantum Well Separate Confinement Heterostructure  
Features  
High power  
Recommended optical power output: Po = 1.0W  
Low operating current: Iop = 1.4A (Po = 1.0W)  
Applications  
Solid state laser excitation  
Medical use  
Material processes  
Measurement  
Structure  
GaAlAs quantum well structure laser diode  
Absolute Maximum Ratings (Tc = 25°C)  
Optical power output  
Reverse voltage  
Po  
1.1  
2
W
V
VR  
LD  
PD  
15  
V
Operating temperature (Tc) Topr  
–10 to +30  
–40 to +85  
°C  
°C  
Storage temperature  
Tstg  
Pin Configuration  
2
1
3
1. LD cathode  
2. PD anode  
3. COMMON  
Bottom View  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E93207A81-PS  

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