Datasheet > SLB_P3205T

SLB_P3205T

更新时间： 2024-09-25 18:09:43

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	619K
描述
TO-263&TO-220C

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SLB_P3205T 数据手册

SLB3205T/SLP3205T

60V N -Channel MOSFET

Features

General Description

- N-Channel:60V 120A

This Power MOSFET is produced using Msemitek‘s

R_DS(on)Typ= 4.9mΩ@V_GS= 10 V

advanced TRENCH technology.

This advanced technology has been especially tailored

to minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- Very Low On-resistance R_DS(ON)

- Low Crss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

Application

PWM Application

Load Switch

Power Management

TO-263

TO-220C

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLB3205T/SLP3205T

Units

Drain-Source Voltage

120

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

I_D

(Note 1)

(Note 2)

I_DM

V_GSS

E_AS

Drain Current

380

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

625

150

P_D

Power Dissipation (T_C= 100℃)

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to ambient

Operating and Storage Temperature Range

R _θJC

R _θJA

℃/W

℃

T_J, T_STG

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 Apr. 2020

12 3 4 5 6 7...9

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