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SL12HE3/5AT PDF预览

SL12HE3/5AT

更新时间: 2024-11-20 18:57:39
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 83K
描述
RECTIFIER DIODE

SL12HE3/5AT 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.5
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.23 VJESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:1最高工作温度:125 °C
最大输出电流:15 A峰值回流温度(摄氏度):260
最大重复峰值反向电压:20 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN处于峰值回流温度下的最长时间:30
Base Number Matches:1

SL12HE3/5AT 数据手册

 浏览型号SL12HE3/5AT的Datasheet PDF文件第2页浏览型号SL12HE3/5AT的Datasheet PDF文件第3页浏览型号SL12HE3/5AT的Datasheet PDF文件第4页 
SL12, SL13  
Vishay General Semiconductor  
www.vishay.com  
Low VF Surface Mount Schottky Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Very low forward voltage drop  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified  
DO-214AC (SMA)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
1.5 A  
20 V, 30 V  
50 A  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
VF  
0.34 V  
Molding compound meets UL 94 V-0 flammability rating  
TJ max.  
125 °C  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
Package  
DO-214AC (SMA)  
Single  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
Diode variations  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SL12  
SL2  
20  
SL13  
SL3  
30  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
14  
21  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 105 °C (fig. 1)  
20  
30  
IF(AV)  
1.5  
50  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/μs  
°C  
-55 to +125  
-55 to +150  
TSTG  
°C  
Revision: 09-Nov-16  
Document Number: 88740  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, Diodes-Europe@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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