Datasheet > SL12-M

SL12-M

更新时间： 2024-11-20 11:59:31

品牌	Logo	应用领域
威伦 - WILLAS		/
页数	文件大小	规格书
4页	494K
描述
1.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V SOD-123-L PACKAGE

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中文翻译

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数据手册

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SL12-M 数据手册

WILLAS

SL12-M

SL14-M

1.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V

SOD-123-L PACKAGE

Package outline

Features

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

SOD-123-L

• Low profile surface mounted application in order to

0.154(3.9)

0.138(3.5)

optimize board space.

0.012(0.3) Typ.

• Tiny plastic SMD package.

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• High surge capability.

0.075(1.9)

0.060(1.5)

• Guardring for overvoltage protection.

• Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

Moisture Sensitivity Level 1

•

0.067(1.7)

0.051(1.3)

Mechanical data

• Epoxy : UL94-V0 rated flame retardant

• Case : Molded plastic, SOD-123-L

0.028(0.7) Typ.

• Terminals :Plated terminals, solderable per MIL-STD-750,

Method 2026

Dimensions in inches and (millimeters)

• Polarity : Indicated by cathode band

• Mounting Position : Any

• Weight : Approximated 0.018 gram

Maximum ratings and Electrical Characteristics (AT T_A=25^oC unless otherwise noted)

MAX.

UNIT

MIN.

TYP.

PARAMETER

CONDITIONS

Symbol

I_O

1.0

Forward rectified current

See Fig.2

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

I_FSM

Forward surge current

V_R= V_RRMT_J= 25^OC

I_R

1.0

Reverse current

C_J

^OC

Diode junction capacitance

Storage temperature

130

f=1MHz and applied 4V DC reverse voltage

+150

-55

T_STG

Operating

V_RRM

(V)

V_R

(V)

V_RMS

(V)

*1 Repetitive peak reverse voltage

*2 RMS voltage

V_F

SYMBOLS

temperature

T_J, (^OC)

(V)

SL12-M

SL14-M

0.38

*3 Continuous reverse voltage

*4 Maximum forward voltage@I_F=1.0A

-55 to +100

0.40

2013-01

WILLAS ELECTRONIC CORP.

12 3 4

中文翻译

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